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SI2320DS-T1-E3-VB Product details

Product introduction:

Product Introduction:
SI2320DS-T1-E3 is a single N-channel MOSFET from Vishay, packaged in SOT23-3, with a drain-source voltage (VDS) of 200V and a maximum drain current (ID) of up to 0.6A. This MOSFET uses Trench technology and has a higher Vth (threshold voltage) of 2.5V, suitable for high-voltage power management and switching applications. Its larger on-resistance (RDS(ON) = 1400mΩ@VGS=10V) makes it suitable for some low-to-medium power and lower current applications. This device excels in situations requiring low cost, low board area and high voltage withstand performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 200V 20(±V) 2.5V 0.6A 1400mΩ
Detailed parameter description:
- **Model**: SI2320DS-T1-E3
- **Package**: SOT23-3
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 200V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- 1400mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 0.6A
- **Technology**: Trench technology
- **Operating Temperature Range**: -55°C to +150°C
- **Application**: Medium and low power switches, load switches, overvoltage protection and other applications

Domain and module applications:

Applications and module examples:
1. **Power management system**:
SI2320DS-T1-E3 MOSFET is well suited for use in power management modules, especially in applications requiring high withstand voltage and medium power handling capabilities, such as as a switching element in a DC-DC converter. Its 200V VDS enables it to handle higher input voltages, while its 0.6A ID is suitable for medium and low power applications.

2. **Overvoltage protection circuit**:
In power circuits or battery management systems, the SI2320DS-T1-E3 MOSFET can be used as part of an overvoltage protection circuit. When the voltage exceeds a safe threshold, the MOSFET quickly cuts off the flow of current, thereby preventing damage to the circuit. This protection function is particularly important for sensitive circuits with high voltage or high current.

3. **Low-power switching applications**:
Although the SI2320DS-T1-E3 has a lower ID, it is still suitable for low-power switching applications, such as small load control, battery-driven equipment, or sensor circuits. Its small SOT23 package and low gate voltage make it ideal for control circuits and small electronic modules.

4. **Load Switch**:
Due to its high withstand voltage characteristics, the SI2320DS-T1-E3 MOSFET provides efficient and reliable current switching in a variety of load switching applications. Its ability to handle higher voltage inputs and provide stable switching control at low current loads makes it an ideal choice for low-power load switches.

5. **Switching Power Supply**:
SI2320DS-T1-E3 can also be used for high-voltage switching functions in switching power supply modules. In these applications, MOSFET acts as a key element for current switching, which can effectively control the flow of current and ensure stable output of power supply, especially during power conversion and regulation.

6. **LED Drive Circuit**:
In LED lighting systems, SI2320DS-T1-E3 can be used for switch control in the drive circuit to help achieve efficient power regulation and current stability. Due to its high withstand voltage characteristics, it is suitable for some LED driving applications that need to withstand higher voltages.

Summary: SI2320DS-T1-E3 MOSFET is suitable for a variety of power management, load switching, protection circuits and other fields due to its 200V high withstand voltage, low power consumption and small package. It is suitable for applications that require medium current, higher voltage and compact size.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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