Product introduction：
Product Introduction:
**SI2307DS-VB** is a unipolar P-type MOSFET based on Trench technology, using a compact SOT23-3 package, with efficient electrical performance and excellent thermal management characteristics. The device has a maximum drain-source voltage of -30V, a maximum drain current of -5.6A, and provides low on-resistance, suitable for a variety of low-power applications such as power management, load switching, overvoltage protection and other fields. Its high reliability, low conduction loss and fast switching characteristics make it widely used in many portable devices and consumer electronics.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
|
46mΩ |
|
Detailed parameter description:
- **Package type**: SOT23-3
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 46mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -5.6A
- **Technology**: Trench technology
Domain and module applications：
Typical application areas and modules:
1. **Battery management and low-power power design**:
SI2307DS-VB is suitable for power management systems in portable battery-powered devices. Its low on-resistance and small package make it very valuable in applications that require low power consumption and efficient power switching, such as smartphones, wearable devices, battery management systems (BMS), etc. This MOSFET provides fast and reliable switching performance in battery charging, power-off protection, etc., thereby extending battery life and improving overall energy efficiency.
2. **Load switch and power path control**:
As an efficient P-type MOSFET, SI2307DS-VB is very suitable for load switching and power path control modules. In these applications, the low on-resistance of the MOSFET ensures efficient current transfer while being able to operate under low voltage and low power conditions. This MOSFET can find applications in portable power management, USB power supply systems, power path switching of mobile devices, etc.
3. **Overvoltage/Overcurrent Protection**:
In power protection circuits, the P-type structure of SI2307DS-VB makes it ideal for overvoltage or overcurrent protection applications. When the power supply voltage exceeds the preset range, it can quickly cut off the circuit to protect the device from damage. For example, it can be used in overvoltage protection circuits in power adapters to ensure that electronic devices are protected from high voltage damage.
4. **DC-DC Converter**:
SI2307DS-VB can be used as a switching element and play a role in low-voltage DC-DC converter modules, especially in applications that require small packages and high efficiency. Its low on-resistance has significant advantages in improving efficiency and reducing heat, and is suitable for high-efficiency voltage conversion applications such as mobile phone chargers, portable power supplies, and embedded systems.
5. **Communication Equipment and Embedded Systems**:
In embedded systems, SI2307DS-VB is also widely used in power switches, signal amplification and other modules. It can play an important role in low voltage power supply systems, helping to improve overall system efficiency and reduce energy consumption. Due to its lower on-resistance, SI2307DS-VB can help the system reduce power loss and improve system performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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