Product introduction：
**SI1912EDH-T1-GE3-VB Product Introduction**
SI1912EDH-T1-GE3-VB is a dual N-type MOSFET in SC70-6 package, using Trench technology, with low R_DS(on) characteristics, suitable for power management applications requiring high efficiency and low power consumption. This model provides up to 2.6A of drain current, with excellent switching performance and thermal stability. Its V_DS is up to 20V and V_GS is up to ±12V, suitable for a variety of medium and low voltage power control and switching applications, such as mobile devices, load switches, battery management systems, etc.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
110mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
|
|
**SI1912EDH-T1-GE3-VB Detailed parameter description**
- **Package:** SC70-6
- **Configuration:** Dual N-type MOSFET (N+N-Channel)
- **V_DS (drain-source voltage):** 20V
- **V_GS (gate-source voltage):** ±12V
- **V_th (gate threshold voltage):** 0.5V to 1.5V
- **R_DS(ON) (on-resistance):**
- 110mΩ @ V_GS = 2.5V
- 86mΩ @ V_GS = 4.5V
- **ID (maximum drain current):** 2.6A
- **Technology:** Trench (trench technology)
**Electrical characteristics:**
- **Low on-resistance:** The R_DS(on) of this product The low value at different gate voltages means less power consumption and higher efficiency.
- **High efficiency:** Suitable for high-efficiency switching power supplies and low-power devices.
- **Wide gate threshold voltage range:** V_th range is between 0.5V and 1.5V, suitable for a variety of application scenarios.
Domain and module applications：
**Application fields and modules**
1. **Power management module:**
SI1912EDH-T1-GE3-VB has low R_DS(on) and high maximum drain current (2.6A), making it suitable for high-efficiency power management modules, especially in low-voltage high-efficiency converters and DC-DC converters. These power management modules are usually used in mobile phones, portable devices and other applications that require high efficiency and are space-constrained.
2. **Load switch application:**
This MOSFET can be used in load switch modules because of its fast switching characteristics and low on-resistance, which is suitable for circuits requiring high switching frequency and low power consumption. This load switch can provide better power control in many electronic products, such as USB power management and battery switching.
3. **Battery management system:**
This model is also suitable for battery management system (BMS), especially in battery charging and discharging management of portable devices and power tools. Its low on-resistance helps reduce battery heat generation and improve system energy efficiency, extending battery life.
4. **Smartphones and portable devices: **
SI1912EDH-T1-GE3-VB can be used in consumer electronics such as smartphones, wearable devices, tablets, etc., especially in battery-powered devices, to achieve key switching functions for battery management, power optimization and signal processing.
5. **Automotive applications: **
In automotive electronic systems, this MOSFET can be used in modules such as power conversion, LED lighting and on-board chargers. Its reliable switching characteristics and low power consumption make it an ideal choice for automotive electronic modules.
6. **Communication equipment: **
In low-power communication equipment, SI1912EDH-T1-GE3-VB is used as a switch tube in the signal processing circuit of the radio frequency (RF) module to ensure the stability and efficiency of signal transmission.
The high performance and small package of this MOSFET make it suitable for a variety of applications where space is limited and high efficiency is required, especially in portable electronics and smart devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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