Product introduction:
Product Introduction
SI1501DL-T1-GE3-VB is a dual N-channel and P-channel MOSFET in SC70-6 package, which is widely used in low-voltage, high-efficiency switching power supplies, power management, load switches and low-power modules. This MOSFET integrates two transistors, N-channel and P-channel, with a drain-source voltage (V_DS) range of ±20V. It uses Trench technology to provide excellent conduction performance and low switching loss, and is suitable for occasions requiring positive and negative power management and bidirectional switch control. Its maximum on-resistance (R_DS(ON)) is 90mΩ (N-channel) and 155mΩ (P-channel) at V_GS = 4.5V, which can effectively reduce the loss in power conversion and improve the efficiency of the system.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
110/190mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI1501DL-T1-GE3-VB
- **Package type**: SC70-6
- **Configuration**: Dual N+P channel MOSFET
- **Maximum drain-source voltage (V_DS)**: ±20V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**:
- N channel: 1.0V
- P channel: -1.2V
- **On-resistance (R_DS(ON))**:
- N channel (V_GS = 2.5V): 110mΩ
- P channel (V_GS = 2.5V): 190mΩ
- N channel (V_GS = 4.5V): 90mΩ
- P-channel (V_GS = 4.5V): 155mΩ
- **Maximum leakage current (I_D)**:
- N-channel: 3.28A
- P-channel: -2.8A
- **Technology type**: Trench technology
- **Operating temperature range**: -40°C to +125°C (specific values depend on package and application environment)
Domain and module applications:
Applications and Module Examples
SI1501DL-T1-GE3-VB is a dual MOSFET for low-power, high-efficiency applications. It has both positive and negative channel configurations and is ideal for power management, switching power supplies, load switches, dimming, and other fine control applications. The following are typical application areas for this product:
1. **Low-power power management**:
- SI1501DL-T1-GE3-VB's dual N+P channel configuration enables it to handle both positive and negative power in power management systems, making it suitable for high-efficiency battery management systems, power regulators, DC-DC converters, etc. It provides low-power and high-efficiency solutions in battery-driven devices, especially in power management modules that require precise regulation of current and voltage.
2. **Bidirectional load switch**:
- Due to its dual N+P channel design, SI1501DL-T1-GE3-VB is an ideal bidirectional load switch component and is widely used in applications where bipolar current needs to be controlled. For example, in the fields of load management of solar panels, power tools, portable power equipment, etc., efficient and accurate load switching control can be achieved through bipolar control of MOSFET.
3. **Battery-powered system**:
- In portable battery-powered devices, SI1501DL-T1-GE3-VB can be used as a switching element in the battery management system to control the battery charging and discharging process, maintain the battery health and extend its service life. Its low on-resistance characteristics ensure efficient operation of the battery system and reduce energy loss.
4. **LED dimming and load control**:
- This MOSFET is very suitable for LED dimming and load control applications. Its low R_DS(ON) and high switching efficiency enable it to provide stable and efficient performance in the process of high-frequency dimming and load adjustment. Especially in smart lighting systems, it can accurately regulate current and improve the efficiency of light sources.
5. **Automotive Electronic Modules**:
- SI1501DL-T1-GE3-VB is also suitable for automotive electronic applications, such as battery management systems (BMS), on-board chargers, electric drive systems, etc. Its high temperature resistance and excellent electrical performance make it reliable in automotive environments, especially in battery systems of electric vehicles and hybrid vehicles.
6. **Wearable Devices**:
- For wearable devices such as smart watches, fitness trackers, etc., SI1501DL-T1-GE3-VB provides an efficient power management solution. Low power consumption and high efficiency enable the device to achieve longer battery life while maintaining a miniaturized design.
7. **Smart Home and IoT Devices**:
- Due to its compact package and high performance, SI1501DL-T1-GE3-VB is also widely used in smart home, Internet of Things (IoT) devices, especially where fine power regulation and load switch control are required. It can provide efficient power management for smart home devices, extend the life of the devices and improve their working efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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