Product introduction：
1. Product Introduction:
**SI1450DH-T1-GE3-VB** is a high-efficiency single N-channel MOSFET in SC70-6 package, designed for low power and small space applications. The device has a maximum drain-source voltage (VDS) of 30V, suitable for applications requiring low voltage control. Its threshold voltage (Vth) is 1.7V, which can switch efficiently at low voltage and is suitable for low voltage drive systems. With its low on-resistance (RDS(ON)), this MOSFET has an on-resistance of 27mΩ at VGS=4.5V, which is further reduced to 23mΩ at VGS=10V, ensuring efficient current transmission and low power loss.
This MOSFET is suitable for high-density electronic systems, especially for applications requiring small packages, low on-resistance and high current handling capabilities, such as battery-powered devices, power management modules, and portable consumer electronics. The trench technology used in the SI1450DH-T1-GE3-VB provides efficient switching performance, making it excel in a variety of low-power applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Single-N |
30V |
|
1.7V |
4.5A |
|
|
23mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Single-N |
30V |
|
1.7V |
4.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Single-N |
30V |
|
1.7V |
4.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description:
- **Model**: SI1450DH-T1-GE3-VB
- **Package**: SC70-6
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 27mΩ
- @ VGS = 10V: 23mΩ
- **Maximum leakage current (ID)**: 4.5A
- **Technology type**: Trench
- **Maximum operating temperature**: Typically 150°C (specific temperature range depends on the datasheet)
- **Package type**: SC70-6
Domain and module applications：
3. Applications and modules:
The low on-resistance and high-efficiency switching characteristics of the **SI1450DH-T1-GE3-VB** make it very suitable for a variety of low-power applications, especially in space-constrained applications with high power conversion efficiency requirements. The following are the main application areas and modules of this MOSFET:
# 1. **Portable electronic devices**:
The small package (SC70-6) and low on-resistance characteristics of the SI1450DH-T1-GE3-VB make it very suitable for portable electronic devices. Whether it is a smartphone, tablet or other portable device, it can be used as a switching element in the battery management system to provide efficient power conversion and long battery life.
# 6. **Wireless communication equipment**:
This MOSFET can be used in wireless communication equipment, such as radio frequency (RF) modules and low-power Bluetooth modules. It can be used as an RF switch or power control switch to ensure low power loss of the device under high-frequency operation and ensure the stability of signal transmission.
# 7. **Embedded Systems and Sensor Modules**:
SI1450DH-T1-GE3-VB also plays an important role in low-power embedded systems, especially for power management of sensors and small embedded devices. It can be used as a switching element to manage the switching and power consumption of the device and optimize the overall performance.
Summary:
SI1450DH-T1-GE3-VB is a high-efficiency single N-channel MOSFET designed for low-power applications. It is suitable for various power management, LED driving, battery protection, wireless communication and embedded systems. Its small package, low on-resistance and high current handling capability make it an ideal choice for high-efficiency battery-driven systems and small electronic devices. Through efficient switching control, it provides stable and energy-saving performance, helping to optimize the energy efficiency of various electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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