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SI1404DH-T1-GE3-VB Product details

Product introduction:

1. Product Introduction

**SI1404DH-T1-GE3-VB** is a single N-type MOSFET in SC70-3 package, suitable for low voltage, high-efficiency switching and power management applications. This model has a maximum drain-source voltage (VDS) of 20V and a maximum drain current (ID) of 4A. Its threshold voltage (Vth) is between 0.5V and 1.5V, which means that it can start at a lower gate-source voltage and achieve efficient conduction. Its on-resistance (RDS(ON)) at different gate-source voltages is: 48mΩ @VGS=2.5V, 40mΩ @VGS=4.5V, and 36mΩ @VGS=10V. SI1404DH-T1-GE3-VB is manufactured based on Trench technology and has the characteristics of low on-resistance, fast switching response, and low power consumption. It is suitable for various electronic devices that require high efficiency and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A 48mΩ 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-3 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-3 Single-N
2. Detailed parameter description

- **Package form**: SC70-3
- **Configuration**: Single-N-Channel (single N channel)
- **VDS (drain-source voltage)**: 20V
- **VGS (gate-source voltage)**: ±12V
- **Vth (threshold voltage)**: 0.5V to 1.5V
- **RDS(ON) (on-resistance)**:
- 48mΩ (@VGS=2.5V)
- 40mΩ (@VGS=4.5V)
- 36mΩ (@VGS=10V)
- **ID (maximum leakage current)**: 4A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C

Domain and module applications:

III. Application Fields and Module Examples

1. **Low-power consumer electronic devices**
SI1404DH-T1-GE3-VB's low on-resistance and efficient switching performance make it very suitable for low-power consumer electronic devices. For example, in applications such as smartphones, tablets, and wearable devices, the high efficiency of MOSFET ensures that the device maintains low power consumption during long-term use and improves battery life.

2. **Battery Management System (BMS)**
SI1404DH-T1-GE3-VB has low on-resistance and high current carrying capacity, making it very suitable for battery management systems (BMS). It can efficiently manage the charging and discharging process and provide functions such as battery overcurrent protection and voltage regulation. Especially in the battery systems of power tools, mobile devices, and electric vehicles, it can effectively improve the battery life and efficiency.

3. **Power Management and DC/DC Converters**
In DC/DC converters, AC/DC power supplies, and other power management systems, SI1404DH-T1-GE3-VB acts as an efficient switching element to provide stable power conversion efficiency and reduce energy loss. It is particularly suitable for applications that require efficient power conversion, such as charging circuits for portable devices and efficient battery charging modules.

4. **Sensors and Internet of Things (IoT) Devices**
Due to its low power consumption and compact package, SI1404DH-T1-GE3-VB can also be used in sensors and Internet of Things (IoT) devices. In these devices, MOSFETs are used for power management and switching control, which can ensure long-term operation and reduce battery consumption, thereby improving the working efficiency of the device and extending the operating time.

5. **Wireless Communication Modules**
SI1404DH-T1-GE3-VB can also be used in wireless communication modules as a switching element to handle functions such as signal amplification, modulation and demodulation, and power management. Due to its low on-resistance, it can effectively improve signal processing efficiency and reduce power consumption, and is suitable for wireless communication standards such as Bluetooth, Wi-Fi and ZigBee.

6. **Portable power adapter**
This MOSFET is also widely used in portable power adapters. As a switching element, SI1404DH-T1-GE3-VB can be used in power conversion circuits and overvoltage protection circuits to ensure the efficient operation of the power adapter while effectively controlling power consumption, suitable for applications such as small power adapters, mobile power supplies and chargers.

7. **Small home appliances and automation control**
In small home appliances and automation control systems, SI1404DH-T1-GE3-VB can be used as a power switching element for micro power tools, smart home devices and automation control modules. These applications require low-power, high-efficiency switching operations, which can help the equipment achieve longer and more efficient operation.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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