Product introduction：
1. Product Introduction:
**Si1073X-T1-GE3-VB** is a single P-Channel MOSFET in SC75-6 package, designed for low voltage and high efficiency applications. The device has a drain-source voltage (VDS) of -30V and a maximum drain current of -2.4A, suitable for load switching and power management. Si1073X-T1-GE3-VB uses Trench technology and has excellent low on-resistance characteristics, where RDS(ON) is 42mΩ at VGS=4.5V, and RDS(ON) is further reduced to 32mΩ at VGS=10V, which can effectively reduce power loss and improve efficiency. Its threshold voltage Vth is -1.7V, which allows it to work smoothly in low voltage environments, making it an ideal choice for modern low-power power systems and load switches.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-6 |
Single-P |
-30V |
|
-1.7V |
-2.4A |
|
|
32mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-6 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC75-6 |
Single-P |
-30V |
|
-1.7V |
-2.4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC75-6 |
Single-P |
-30V |
|
-1.7V |
-2.4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-6 |
Single-P |
|
|
|
|
|
|
|
2. Detailed parameter description:
- **Package**: SC75-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 42mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -2.4A
- **Technology**: Trench technology
- **Package type**: SC75-6 (surface mount)
Domain and module applications：
3. Application fields and module examples:
**1. Battery-powered devices: **
Si1073X-T1-GE3-VB is widely used in battery-powered devices due to its low on-resistance and low threshold voltage. It is suitable for battery protection circuits, battery management systems, and portable electronic devices, which can effectively reduce power consumption and extend battery life. This MOSFET has low power loss during load switching, helping the system achieve higher efficiency, and is suitable for devices such as smartphones, tablets, and power tools.
**2. Power switch: **
In switching power supply systems, Si1073X-T1-GE3-VB is often used as a load switch or power switching element. Due to its low RDS(ON) characteristics, it has low conduction loss during power conversion, which can improve the efficiency of switching power supplies, especially in low-power and medium-power power applications, such as DC-DC converters (DC-DC converters), boost/buck converters, etc.
**3. Load switching and power management: **
This MOSFET is suitable for various load switching applications, especially in power management modules, and can work stably under different voltage conditions. Its low on-resistance and small package make it particularly suitable for high-efficiency systems in switching mode. It can provide low-power, high-efficiency load switching solutions for smart home devices, electric vehicle chargers and other industrial applications.
**4. High-efficiency switching applications: **
Si1073X-T1-GE3-VB is also very suitable for high-efficiency switching applications, especially in frequent switching occasions. It can be used in high-frequency switching circuits such as switching power supplies, signal processing modules and RF amplifiers. Its Trench technology enables it to have faster switching speeds and lower switching losses, and it performs well under high-frequency operation and can provide higher working efficiency.
Through these applications, Si1073X-T1-GE3-VB provides an efficient and low-power solution for a variety of power management and load switching fields, especially in high-efficiency power conversion and low-power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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