Product introduction：
Product Introduction: Si1071X-T1-GE3-VB MOSFET
The Si1071X-T1-GE3-VB is a unipolar P-Channel MOSFET in a small SC75-6 package designed for low voltage and low power applications. This MOSFET has low on-resistance and high switching performance, suitable for low current switch control, power management, and load control in small devices. Its maximum drain-source voltage (V_DS) is -30V, the maximum gate-source voltage (V_GS) is ±20V, and the threshold voltage (V_th) is -1.7V. The on-resistance of the Si1071X-T1-GE3-VB is 32mΩ at V_GS = 10V, 42mΩ at V_GS = 4.5V, and the maximum drain current (I_D) is -2.4A. Manufactured using Trench technology, it has low power consumption, high efficiency and reliable switching performance, and is widely used in battery management, portable devices and various load control modules.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-6 |
Single-P |
-30V |
|
-1.7V |
-2.4A |
|
|
32mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-6 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC75-6 |
Single-P |
-30V |
|
-1.7V |
-2.4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC75-6 |
Single-P |
-30V |
|
-1.7V |
-2.4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-6 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package**: SC75-6
- **Configuration**: Single P-Channel
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- At V_GS = 4.5V: 42mΩ
- At V_GS = 10V: 32mΩ
- **Drain current (I_D)**: -2.4A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples:
1. **Load switch in battery-powered system**:
Si1071X-T1-GE3-VB is suitable for battery-powered systems as a load switch element to control the start and stop of the load. Due to its low on-resistance, it can effectively manage battery power, reduce power loss, and extend battery life. Typical applications include portable devices, power tools, handheld instruments, etc.
2. **Low-voltage power management**:
In low-voltage power management systems, Si1071X-T1-GE3-VB can be used as a power switch element. Its low on-resistance and efficient switching performance enable it to effectively control the flow of power, which is particularly suitable for power management modules in smart homes, mobile devices, and embedded systems.
3. **Load switching and protection**:
Si1071X-T1-GE3-VB is suitable for load switching and overcurrent protection. Because it can withstand high currents and has low on-resistance, it is ideal for use in low-power systems to help control the switching of loads and protect circuits from current surges. Application examples include battery-powered sensors, LED driver power supplies, etc.
4. **Smart Home Devices**:
Si1071X-T1-GE3-VB can also be widely used in smart home systems, such as smart switches, automation control systems, etc. Its small package and high efficiency enable it to provide stable power control in space-limited devices and reduce system energy consumption.
5. **Low-Power DC Power Supply**:
In low-power DC power supply systems, Si1071X-T1-GE3-VB can be used for load control or power conversion switches in small power modules. Especially in products such as micro battery chargers, electric toys, and portable audio, this MOSFET can provide stable current control to ensure the stability and efficiency of the power supply system.
6. **Automotive electronics**:
In some automotive electronic systems, Si1071X-T1-GE3-VB can be used in battery management systems, vehicle sensor power switches and other applications. It can effectively manage low-voltage batteries and power conversion, and provide efficient power switching control for smart car devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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