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Si1058X-T1-GE3-VB Product details

Product introduction:

Si1058X-T1-GE3-VB Product Introduction

Si1058X-T1-GE3-VB is a single N-channel MOSFET in SC75-6 package. It has low on-resistance, excellent switching performance and efficient current control characteristics. It is widely used in low-voltage and low-power circuits. It is manufactured using Trench technology, which gives it a lower RDS(ON), thereby providing lower power loss and higher efficiency. The threshold voltage (Vth) of this product is 1.7V, which can adapt to a variety of low-voltage control systems. The drain voltage (VDS) of Si1058X-T1-GE3-VB is 30V and the maximum drain current (ID) is 3A, which is suitable for various low-power applications such as consumer electronics, load switch control, battery management, etc.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC75-6 Single-N 30V 1.7V 3A 23mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC75-6 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC75-6 Single-N 30V 1.7V 3A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC75-6 Single-N 30V 1.7V 3A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC75-6 Single-N
Detailed parameter description

- **Package type**: SC75-6
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- @ VGS = 4.5V: 27mΩ
- @ VGS = 10V: 23mΩ
- **ID (drain current)**: 3A
- **Technology type**: Trench
- **Operating temperature range**: Suitable for a wide working environment, especially for low-power power supply applications

Domain and module applications:

Application fields and module examples

1. **Low-power power management**
Si1058X-T1-GE3-VB is very suitable for low-power power management systems. Its low on-resistance and high efficiency make it excellent in portable power devices, especially suitable for chargers, USB power adapters, low-power DC-DC converters and other scenarios. In these systems, MOSFETs can be used to control the flow of current and regulate voltage, improve the efficiency of power supply, and extend the battery life of the device.

2. **Load switch control**
As a single N-channel MOSFET, Si1058X-T1-GE3-VB has a very wide range of applicability in load switch applications. It can be used for switching control of various small loads, including portable consumer electronic devices, portable battery-powered systems, etc. Due to its low RDS(ON) value, it can effectively reduce switching losses and extend the service life of the device.

3. **LED drive circuit**
Si1058X-T1-GE3-VB can be used for switch control in LED drive circuits. The low on-resistance of this MOSFET makes it particularly suitable for use in LED lighting, especially in low-power applications such as desk lamps, backlights, and automotive interior lights. Its efficient current control capability helps reduce the energy loss of the overall circuit and provides better brightness control.

4. **Battery protection circuit**
In battery management and protection circuits, Si1058X-T1-GE3-VB can be used to efficiently switch battery current to prevent over-discharge or over-charge of the battery. This makes it an ideal battery protection component in battery-driven portable devices such as smart watches, wireless headphones, power tools, etc. Due to its low on-resistance, it can reduce power loss and improve the performance of battery protection systems.

5. **Consumer Electronics**
Si1058X-T1-GE3-VB can be widely used in a variety of consumer electronics products, including smartphones, tablets, portable speakers, Bluetooth devices, etc. Its small size and high efficiency make it an ideal power switch and current controller in these low-power devices, which can effectively improve system efficiency and extend battery life.

6. **Smart Home Devices**
In smart home products, Si1058X-T1-GE3-VB can also play a key role. It can be used to control the power supply of low-power home appliances, such as smart bulbs, smart sockets, smart door locks, etc. Through the efficient switching control of this MOSFET, these devices can be precisely adjusted, improving the overall performance and energy saving effect of smart homes.

7. **Automotive Electronics**
Si1058X-T1-GE3-VB also has certain application potential in automotive electronics, especially in vehicle battery management systems and low-power vehicle devices. Since it can withstand drain-source voltages up to 30V, this MOSFET can play an important role in low-power circuits such as in-vehicle battery management, electric seat adjustment, and car audio systems.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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