Product introduction：
1. Product Introduction:
SI1012R-T1-GE3-VB is an N-channel MOSFET in SC75-3 package, designed for low voltage and low current switching applications. Its maximum drain-source voltage (VDS) is 20V, which is suitable for switching control of low voltage power supplies. The gate-source voltage (VGS) of this MOSFET is ±12V, and the threshold voltage (Vth) ranges from 0.5V to 1.5V. It can achieve switching operation at a lower gate voltage and has higher switching efficiency. RDS(ON) is 390mΩ (VGS = 2.5V) and 270mΩ (VGS = 4.5V). Its low on-resistance makes the power loss low, which is especially suitable for applications with high energy efficiency requirements. Its maximum drain current (ID) is 0.85A, which can meet the needs of low current power management and load driving.
This MOSFET adopts Trench technology, providing good switching performance and high efficiency, suitable for mobile phones, portable electronic devices, low-power DC power supplies, LED drive circuits and other applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-3 |
Single-N |
20V |
|
0.5~1.5V |
0.85A |
390mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-3 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC75-3 |
Single-N |
20V |
|
0.5~1.5V |
0.85A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC75-3 |
Single-N |
20V |
|
0.5~1.5V |
0.85A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-3 |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description:
- **Model**: SI1012R-T1-GE3-VB
- **Package**: SC75-3
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 2.5V: 390mΩ
- @ VGS = 4.5V: 270mΩ
- **Maximum leakage current (ID)**: 0.85A
- **Technology type**: Trench
- **Maximum operating temperature**: Typically 150°C (Please refer to the datasheet for details)
Domain and module applications：
3. Application fields and modules:
SI1012R-T1-GE3-VB is a MOSFET designed for low voltage and low current applications, suitable for the following fields and modules:
- **Portable electronic devices**: Due to its low drain-source voltage (VDS = 20V) and low current capability (ID = 0.85A), SI1012R-T1-GE3-VB is very suitable for power management and switch control in portable electronic products such as mobile phones, tablets, and handheld devices. This MOSFET can effectively control low current power sources and provide efficient energy conversion and management for battery-powered devices.
- **LED drive circuit**: The low on-resistance characteristics of SI1012R-T1-GE3-VB make it suitable for LED drive circuits. It can effectively control current, reduce power loss, and improve the efficiency of LED lighting systems. In applications that require stable current regulation, SI1012R-T1-GE3-VB can help reduce heat and improve system reliability.
- **Low Power DC Power Supply**: This MOSFET also performs well in low power DC power management systems, such as USB power adapters, low power battery chargers, and small power modules. Its excellent on-resistance (RDS(ON)) minimizes power loss and ensures efficient energy conversion.
- **Small Motor Drive**: This MOSFET can be used in small motor drive applications, especially in low power power tools, toys, and consumer electronics, to control the forward and reverse rotation and switching operation of the motor and provide a stable working state.
- **Battery Management System (BMS)**: SI1012R-T1-GE3-VB can also be used as a switching element in a battery management system, especially in a small portable battery system. It can provide current switching and current regulation functions of the battery to ensure the stability and safety of the battery during charging and discharging.
- **Low Power Load Switch**: This MOSFET is suitable for switching control of low power loads, such as sensors, power line switches, low power relays, etc. Due to its low on-resistance and efficient switching performance, it is able to provide efficient current control for these low power loads.
- **Logic Circuits and Signal Conditioning**: SI1012R-T1-GE3-VB can also be used in low power logic circuits and signal conditioning applications to control signal flow and maintain efficient switching response.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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