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SH8M5TB-VB Product details

Product introduction:

Product Introduction

**SH8M5TB-VB** is a dual N+P channel MOSFET in SOP8 package, designed for low voltage and high efficiency energy conversion. The device has symmetrical current characteristics and is equipped with an N channel and a P channel MOSFET, making it very effective in many applications that require bidirectional current control. Its maximum drain-source voltage (VDS) is ±30V, which is suitable for low voltage and high efficiency energy transmission applications. The maximum gate-source voltage (VGS) of this MOSFET is ±20V, which is compatible with a variety of voltage driving conditions. The threshold voltage (Vth) is 1.6V (N channel) and -1.7V (P channel), respectively, which allows the MOSFET to be turned on at a lower control voltage. The on-resistance (RDS(ON)) is 24mΩ (N channel) and 50mΩ (P channel) at VGS=4.5V, and 18mΩ (N channel) and 40mΩ (P channel) at VGS=10V, respectively, which means that this MOSFET has low conduction loss and efficient switching characteristics. The maximum drain current (ID) is ±8A, which is suitable for switching applications with medium current requirements. The use of Trench technology further optimizes the switching performance and conduction efficiency, and is widely used in power conversion, battery management, power tools and various automation control systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
Detailed parameter description

- **Model**: SH8M5TB-VB
- **Package type**: SOP8
- **Configuration**: Dual-N+P-Channel
- **Maximum drain-source voltage (VDS)**: ±30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N-channel: 1.6V
- P-channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-channel:
- 24mΩ (VGS = 4.5V)
- 18mΩ (VGS = 10V)
- P-channel:
- 50mΩ (VGS = 4.5V)
- 40mΩ (VGS = 10V)
- **Maximum drain current (ID)**: ±8A
- **Technology**: Trench (trench technology)

Domain and module applications:

Applications and module examples

1. **DC-DC converter**
**SH8M5TB-VB** dual N+P channel MOSFET is ideal for power switch control in DC-DC converters, especially when efficient current switching and bidirectional current flow are required. Its N-channel and P-channel MOSFET combination enables higher integration and efficiency in many converter designs, reducing the number of components required in the circuit. The device can be used in various portable devices, portable power adapters, LED drivers, and mobile battery management applications.

2. **Battery Management System (BMS)**
In a battery management system (BMS), **SH8M5TB-VB** can effectively manage the charging and discharging process of the battery, especially in electric vehicles (EVs), power tools, and energy storage devices. The P-channel MOSFET is used for the positive switch control of the battery, and the N-channel MOSFET is used for the negative switch control. The bidirectional current capability of this MOSFET makes it suitable for use in battery balancing and protection circuits to ensure the safety and long-term stable operation of the battery system.

3. **Power tools**
In power tool power management, **SH8M5TB-VB** can be used for battery management and motor drive. Due to its low on-resistance and high current capability, this MOSFET can efficiently transmit current to ensure continuous and efficient operation of the tool. It can provide precise current control during the charging and discharging process of the power tool, optimize battery life, and reduce power loss.

4. **LED lighting system**
In LED drive circuits, **SH8M5TB-VB** can play an important role in dimming control and current management. Especially in intelligent LED lighting systems, the dual N+P channel MOSFET can effectively control the current direction and adjust the brightness of the light source. Its low RDS(ON) value helps improve efficiency and reduce heat generation, and is suitable for high-efficiency LED lamps and dimmable lighting systems.

5. **Intelligent Power Switch**
**SH8M5TB-VB**'s dual N+P configuration makes it an ideal intelligent power switch, which is widely used in various low-voltage power systems, especially in situations where bidirectional current control is required. This MOSFET can be used as a power switch, load switching, and protection circuit, and is widely used in computer power supplies, UPS power supplies, mobile power supplies, and other fields.

6. **Inverter and Power Module**
In inverters and power conversion modules, **SH8M5TB-VB**'s bidirectional current control characteristics make it a key component for efficient energy conversion. Its N-channel and P-channel MOSFET configurations can provide stable current management in DC-AC or AC-DC conversion. This MOSFET can achieve efficient current switching and low-power operation, and is suitable for electric vehicle inverters, solar inverters, and various power management systems.

7. **Automotive Electronics**
In automotive electronic systems, **SH8M5TB-VB** can be used for battery management systems, power conversion, and load control. Its dual N+P configuration enables it to perform power conversion and current regulation in high-efficiency automotive electronics, ensuring stable voltage output and extended battery life. This MOSFET can also be used for motor control and battery charge and discharge management in hybrid electric vehicles (HEV) or electric vehicles (EV).

8. **Overcurrent protection and load switching**
**SH8M5TB-VB** In overcurrent protection and load switching applications, it can provide fast response switching capabilities to protect circuits from overcurrent and short circuit damage. It can be used in load switches and current limiting modules for various electrical equipment to ensure that the system works stably under overload conditions and avoid damage to key components.

In summary, **SH8M5TB-VB** dual N+P channel MOSFET is widely used in power management, LED drive, battery management, power tools, electric vehicles, power conversion and protection circuits and other fields. Its low on-resistance, high current handling capability and bidirectional current control characteristics make it excellent in various high-efficiency current switching and power conversion applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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