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SGM0410S-VB Product details
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SGM0410S-VB MOSFET Product Introduction
The SGM0410S-VB is a unipolar N-type MOSFET in a SOT89 package with high performance and reliability, designed for low-voltage power switching applications. Its drain-source voltage (Vds) is 100V, suitable for medium-power switching circuits and power management systems. The device has a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vth) of 1.8V, which means it can be turned on at a relatively low gate voltage, providing fast switching performance.
The SGM0410S-VB uses Trench technology to have a low on-resistance. At Vgs = 4.5V, the on-resistance (Rds(on)) is 125mΩ, and at Vgs = 10V, the on-resistance is further reduced to 102mΩ. This low on-resistance helps reduce power losses, improve overall system efficiency, and keep heat generation low. The maximum drain current (Id) of this MOSFET is 4.2A, which is suitable for low-power drives, switching power supplies and other applications requiring high-efficiency control.
The SGM0410S-VB is a unipolar N-type MOSFET in a SOT89 package with high performance and reliability, designed for low-voltage power switching applications. Its drain-source voltage (Vds) is 100V, suitable for medium-power switching circuits and power management systems. The device has a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vth) of 1.8V, which means it can be turned on at a relatively low gate voltage, providing fast switching performance.
The SGM0410S-VB uses Trench technology to have a low on-resistance. At Vgs = 4.5V, the on-resistance (Rds(on)) is 125mΩ, and at Vgs = 10V, the on-resistance is further reduced to 102mΩ. This low on-resistance helps reduce power losses, improve overall system efficiency, and keep heat generation low. The maximum drain current (Id) of this MOSFET is 4.2A, which is suitable for low-power drives, switching power supplies and other applications requiring high-efficiency control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | 102mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
SGM0410S-VB MOSFET detailed parameter description
| Parameter | Description |
|---------------------|----------------------------------|
| **Model** | SGM0410S-VB |
| **Package** | SOT89 |
| **Configuration** | Unipolar N-type MOSFET |
| **Vds** | 100V |
| **Vgs** | ±20V |
| **Vth** | 1.8V |
| **Rds(on)@Vgs=4.5V** | 125mΩ |
| **Rds(on)@Vgs=10V** | 102mΩ |
| **Id** | 4.2A |
| **Technology** | Trench technology|
| **Maximum power loss** | About 0.8W (depending on working conditions) |
| **Operating Temperature Range** | -55°C to +150°C |
| Parameter | Description |
|---------------------|----------------------------------|
| **Model** | SGM0410S-VB |
| **Package** | SOT89 |
| **Configuration** | Unipolar N-type MOSFET |
| **Vds** | 100V |
| **Vgs** | ±20V |
| **Vth** | 1.8V |
| **Rds(on)@Vgs=4.5V** | 125mΩ |
| **Rds(on)@Vgs=10V** | 102mΩ |
| **Id** | 4.2A |
| **Technology** | Trench technology|
| **Maximum power loss** | About 0.8W (depending on working conditions) |
| **Operating Temperature Range** | -55°C to +150°C |
Domain and module applications：
SGM0410S-VB Applications and Modules
1. **Low-power power management system**
Due to the low on-resistance and high switching performance of the SGM0410S-VB, it is very suitable for low-power power management systems such as DC-DC converters, linear regulators, and battery charging management circuits. As an efficient switching element, the MOSFET can provide a stable current while reducing power loss and improving the overall efficiency of the system, especially in portable devices that require compact design and high efficiency.
2. **LED drive circuit**
In the LED lighting drive circuit, the SGM0410S-VB can provide stable current control to ensure that the LED operates at the rated operating current. The low Rds(on) and efficient switching characteristics of the MOSFET can minimize power loss and extend the service life of the LED while providing a constant, non-fluctuating current output.
3. **Switching Mode Power Supply (SMPS)**
The SGM0410S-VB is suitable for switching mode power supply (SMPS) applications, especially in low voltage, high-efficiency applications. Due to its low on-resistance and high current capability, this MOSFET can effectively support high-frequency switching, reduce energy loss during power conversion, and improve the efficiency and reliability of the switching power supply.
4. **Power Switch and Motor Control**
In power switch systems and motor control circuits, the SGM0410S-VB is very suitable for small motor drive and speed regulation systems due to its high voltage resistance and high current handling capability (maximum 4.2A). It can efficiently control the start, acceleration, deceleration and stop of the motor to ensure smooth operation and low energy consumption.
5. **Automotive Electronics Applications**
This MOSFET is also suitable for automotive electronic systems such as electric power steering, on-board chargers and battery management systems (BMS). In these applications, the SGM0410S-VB can be used as an efficient switching element to optimize power usage, reduce system energy loss, and improve the stability and reliability of the entire electrical system.
6. **Communications and Consumer Electronics**
Due to its low on-resistance and efficient switching performance, the SGM0410S-VB is also suitable for a variety of communications and consumer electronics, such as portable devices, battery-powered systems, and other low-power electronic modules. In these applications, the low heat characteristics of MOSFET can effectively control the temperature rise of the device and ensure long-term stable operation.
1. **Low-power power management system**
Due to the low on-resistance and high switching performance of the SGM0410S-VB, it is very suitable for low-power power management systems such as DC-DC converters, linear regulators, and battery charging management circuits. As an efficient switching element, the MOSFET can provide a stable current while reducing power loss and improving the overall efficiency of the system, especially in portable devices that require compact design and high efficiency.
2. **LED drive circuit**
In the LED lighting drive circuit, the SGM0410S-VB can provide stable current control to ensure that the LED operates at the rated operating current. The low Rds(on) and efficient switching characteristics of the MOSFET can minimize power loss and extend the service life of the LED while providing a constant, non-fluctuating current output.
3. **Switching Mode Power Supply (SMPS)**
The SGM0410S-VB is suitable for switching mode power supply (SMPS) applications, especially in low voltage, high-efficiency applications. Due to its low on-resistance and high current capability, this MOSFET can effectively support high-frequency switching, reduce energy loss during power conversion, and improve the efficiency and reliability of the switching power supply.
4. **Power Switch and Motor Control**
In power switch systems and motor control circuits, the SGM0410S-VB is very suitable for small motor drive and speed regulation systems due to its high voltage resistance and high current handling capability (maximum 4.2A). It can efficiently control the start, acceleration, deceleration and stop of the motor to ensure smooth operation and low energy consumption.
5. **Automotive Electronics Applications**
This MOSFET is also suitable for automotive electronic systems such as electric power steering, on-board chargers and battery management systems (BMS). In these applications, the SGM0410S-VB can be used as an efficient switching element to optimize power usage, reduce system energy loss, and improve the stability and reliability of the entire electrical system.
6. **Communications and Consumer Electronics**
Due to its low on-resistance and efficient switching performance, the SGM0410S-VB is also suitable for a variety of communications and consumer electronics, such as portable devices, battery-powered systems, and other low-power electronic modules. In these applications, the low heat characteristics of MOSFET can effectively control the temperature rise of the device and ensure long-term stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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