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SFW9Z34-VB Product details
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1. **Product Introduction:**
SFW9Z34-VB is a unipolar P-type MOSFET in TO263 package with -60V drain-source voltage (VDS) and ±20V gate-source voltage (VGS) limits. The device has a maximum drain current (ID) of -30A and, based on Trench technology, provides a low on-resistance (RDS(ON)) of 77mΩ (at VGS=4.5V) and 64mΩ (at VGS=10V). Its threshold voltage (Vth) is -1.7V, which means it can start to conduct at a lower gate-source voltage. With its low on-resistance, SFW9Z34-VB is able to operate efficiently under high current conditions and is suitable for power management, motor control, and load switching applications that require low power consumption and high current carrying capacity. Its package form (TO263) gives it good heat dissipation performance and is suitable for high-power application environments.
SFW9Z34-VB is a unipolar P-type MOSFET in TO263 package with -60V drain-source voltage (VDS) and ±20V gate-source voltage (VGS) limits. The device has a maximum drain current (ID) of -30A and, based on Trench technology, provides a low on-resistance (RDS(ON)) of 77mΩ (at VGS=4.5V) and 64mΩ (at VGS=10V). Its threshold voltage (Vth) is -1.7V, which means it can start to conduct at a lower gate-source voltage. With its low on-resistance, SFW9Z34-VB is able to operate efficiently under high current conditions and is suitable for power management, motor control, and load switching applications that require low power consumption and high current carrying capacity. Its package form (TO263) gives it good heat dissipation performance and is suitable for high-power application environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. **Detailed parameter description: **
- **Model**: SFW9Z34-VB
- **Package type**: TO263
- **Configuration**: Unipolar P-type MOSFET
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 77mΩ @VGS=4.5V
- 64mΩ @VGS=10V
- **Maximum leakage current (ID)**: -30A
- **Technology type**: Trench technology
- **Power dissipation capability**: According to the working environment and heat dissipation design, the specific power dissipation capability needs to be further analyzed in combination with the heat dissipation system.
- **Model**: SFW9Z34-VB
- **Package type**: TO263
- **Configuration**: Unipolar P-type MOSFET
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 77mΩ @VGS=4.5V
- 64mΩ @VGS=10V
- **Maximum leakage current (ID)**: -30A
- **Technology type**: Trench technology
- **Power dissipation capability**: According to the working environment and heat dissipation design, the specific power dissipation capability needs to be further analyzed in combination with the heat dissipation system.
Domain and module applications：
3. **Application fields and module examples:**
# 1. **Power management and DC-DC converters:**
SFW9Z34-VB is widely used in power management systems, especially in DC-DC converters. Its low on-resistance (RDS(ON)) enables it to efficiently convert voltages, reduce power losses, and improve system efficiency. The high current carrying capacity of this MOSFET (up to 30A) makes it particularly suitable for systems that require efficient power regulation, such as industrial power supplies, communication equipment, and computer power modules.
Summary:
SFW9Z34-VB is a low on-resistance, high current carrying capacity P-type MOSFET that is very suitable for a variety of applications such as high voltage power management, motor control, load switching, battery management systems, and LED drivers. Its excellent performance in efficient power conversion, current regulation, and load switching makes it play an important role in many fields such as industrial control, automotive electronics, and lighting systems.
# 1. **Power management and DC-DC converters:**
SFW9Z34-VB is widely used in power management systems, especially in DC-DC converters. Its low on-resistance (RDS(ON)) enables it to efficiently convert voltages, reduce power losses, and improve system efficiency. The high current carrying capacity of this MOSFET (up to 30A) makes it particularly suitable for systems that require efficient power regulation, such as industrial power supplies, communication equipment, and computer power modules.
Summary:
SFW9Z34-VB is a low on-resistance, high current carrying capacity P-type MOSFET that is very suitable for a variety of applications such as high voltage power management, motor control, load switching, battery management systems, and LED drivers. Its excellent performance in efficient power conversion, current regulation, and load switching makes it play an important role in many fields such as industrial control, automotive electronics, and lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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