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SFT1445-VB TO252 Product details
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1. **Product Introduction:**
SFT1445-VB is a unipolar N-type MOSFET in TO252 package with 100V drain-source voltage (VDS) and ±20V gate-source voltage (VGS) limits. The device has a drain current (ID) of 15A and a low on-resistance (RDS(ON)) of 114mΩ (at VGS=10V) based on Trench technology. The threshold voltage (Vth) of SFT1445-VB is 1.8V, which means it can start to conduct at low gate-source voltage, suitable for low-voltage drive applications. Due to its high current carrying capacity and low on-resistance, SFT1445-VB has high performance in power management and switching applications, especially in high-efficiency power conversion, load switching and motor drive. This MOSFET is particularly outstanding in applications that require high efficiency, low power consumption and good heat dissipation.
SFT1445-VB is a unipolar N-type MOSFET in TO252 package with 100V drain-source voltage (VDS) and ±20V gate-source voltage (VGS) limits. The device has a drain current (ID) of 15A and a low on-resistance (RDS(ON)) of 114mΩ (at VGS=10V) based on Trench technology. The threshold voltage (Vth) of SFT1445-VB is 1.8V, which means it can start to conduct at low gate-source voltage, suitable for low-voltage drive applications. Due to its high current carrying capacity and low on-resistance, SFT1445-VB has high performance in power management and switching applications, especially in high-efficiency power conversion, load switching and motor drive. This MOSFET is particularly outstanding in applications that require high efficiency, low power consumption and good heat dissipation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description: **
- **Model**: SFT1445-VB
- **Package type**: TO252
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology type**: Trench technology
- **Power dissipation capability**: The specific power dissipation capability needs to be further analyzed based on the working environment and heat dissipation design.
- **Model**: SFT1445-VB
- **Package type**: TO252
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology type**: Trench technology
- **Power dissipation capability**: The specific power dissipation capability needs to be further analyzed based on the working environment and heat dissipation design.
Domain and module applications：
3. **Application fields and module examples:**
# 1. **Power management and DC-DC converters:**
SFT1445-VB is widely used in power management modules, especially in DC-DC converters. This MOSFET can provide low on-resistance in high-efficiency power conversion, reduce power loss and improve conversion efficiency. It is suitable for mobile devices, battery-powered systems and other applications that require high-efficiency power conversion. Its low on-resistance and high leakage current carrying capacity make it very effective in power management and regulators.
Summary:
With its 100V drain-source voltage, 15A current carrying capacity and 114mΩ on-resistance, SFT1445-VB is very suitable for high-efficiency power conversion, load switching, LED driving, motor driving and battery management systems. Its low power consumption and high efficiency enable it to play an important role in many fields, especially in power management and load switching applications, where it can provide excellent performance.
# 1. **Power management and DC-DC converters:**
SFT1445-VB is widely used in power management modules, especially in DC-DC converters. This MOSFET can provide low on-resistance in high-efficiency power conversion, reduce power loss and improve conversion efficiency. It is suitable for mobile devices, battery-powered systems and other applications that require high-efficiency power conversion. Its low on-resistance and high leakage current carrying capacity make it very effective in power management and regulators.
Summary:
With its 100V drain-source voltage, 15A current carrying capacity and 114mΩ on-resistance, SFT1445-VB is very suitable for high-efficiency power conversion, load switching, LED driving, motor driving and battery management systems. Its low power consumption and high efficiency enable it to play an important role in many fields, especially in power management and load switching applications, where it can provide excellent performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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