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SDF07N50-VB Product details

Product introduction:

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SDF07N50-VB is a single N-type MOSFET in TO220F package with high drain-source voltage (VDS 650V) and rated current (ID 12A). This MOSFET adopts planar technology and is suitable for various power electronics applications, especially in high voltage, high current switching power supplies, motor drives, power amplifiers and other fields. Its low on-resistance (RDS(ON) = 680mΩ at VGS = 10V) makes it have low power loss and heat generation, suitable for systems requiring high switching efficiency and reliability.

This product is very suitable for operation in high voltage and high current load environments, and can provide robust performance, especially in high power conversion and high frequency switching applications. In addition, the wide operating temperature range of SDF07N50-VB (-55°C to +150°C) enables it to work stably in harsh environments, further improving the reliability and durability of the system.

**SDF07N50-VB MOSFET

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 12A 680mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
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- **Package**: TO220F
- **Configuration**: Single N-type MOSFET (Single-N-Channel)
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ (at VGS = 10V)
- **Drain current (ID)**: 12A
- **Technology**: Plannar
- **Maximum power dissipation**: Suitable for high power applications
- **Maximum operating temperature**: -55°C to +150°C
- **Features**: Low on-resistance, high voltage, high current carrying capability, wide operating temperature range, suitable for high frequency switching applications

**SDF07N50-VB MOSFET

Domain and module applications:

Examples:

1. **High-voltage power supply system**:
SDF07N50-VB is an excellent switching element, widely used in high-voltage power supply systems, such as industrial power supply, communication power supply, UPS (uninterruptible power supply), etc. In these systems, SDF07N50-VB can effectively control the conversion of voltage and current. Its high-voltage withstand capability (650V) and low on-resistance enable the power supply system to operate under high efficiency and low loss conditions.

2. **Switching power supply (SMPS)**:
SDF07N50-VB MOSFET is widely used in high-efficiency switching power supplies (SMPS), especially in situations requiring high-frequency switching and high-voltage handling. Its low RDS(ON) characteristics enable the system to reduce energy loss and heat accumulation during frequent switching, improve overall efficiency, and is suitable for high-efficiency power supplies and DC-DC converters.

3. **Motor Drive Systems**:
In motor drive and control systems, the SDF07N50-VB is used as a high-efficiency switching element to control the current and voltage of the motor. This MOSFET has good thermal management and high current carrying capacity, suitable for motor drives, power tools, electric vehicles (EVs) and industrial equipment.

4. **Power Amplifier**:
In power amplifier design, the high drain-source voltage and high current carrying capacity of the SDF07N50-VB make it ideal for equipment that requires high power output, such as broadcasting, wireless communications, and radar systems. It can provide stable signal amplification to ensure signal clarity and reliability.

5. **Inverter Systems**:
Inverters (especially those used in solar power generation systems or wind power generation systems) require the use of efficient power switching elements to ensure stable power conversion. SDF07N50-VB is very suitable for such applications because it can effectively withstand the high voltage (650V) and current generated during the inverter process, ensuring that the system works stably with high efficiency.

6. **Battery Management System (BMS)**:
In the battery management system, SDF07N50-VB can be used for battery charge and discharge control, especially in electric vehicles (EV) and energy storage systems, SDF07N50-VB provides a high-efficiency, low-loss current switch, which can effectively improve the battery charge and discharge efficiency and extend the battery life.

7. **Industrial Automation System**:
In industrial automation, SDF07N50-VB MOSFET can be used to control the switch of current, such as in the motor control system for machines. This MOSFET has high current carrying capacity and stability, which is very suitable for working in high-load environments, such as in automated production lines, mechanical equipment and robots.

8. **High Voltage Circuits**:
Due to its maximum drain-source voltage of 650V, the SDF07N50-VB is also very suitable for high voltage circuits, especially in applications where high voltage loads need to be switched, such as high voltage power conversion equipment, power control modules in power systems and power grids.

9. **Welding Equipment and Laser Equipment**:
In welding equipment and laser equipment, since these applications usually involve high power and precisely controlled current flow, the low RDS(ON) and higher operating voltage of the SDF07N50-VB make it an ideal choice. It can ensure efficient and stable operating performance under precise power control.

**Summary: **
SDF07N50-VB is a high performance N-type MOSFET suitable for power management, motor drive, inverter, power amplifier and high voltage control. With its 650V drain-source voltage, 12A rated current and low on-resistance, it can provide excellent efficiency and reliability in high-voltage, high-current load applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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