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SDB85N03L-VB Product details
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Product Introduction:
**SDB85N03L-VB** is a high-efficiency N-channel MOSFET in TO263 package with excellent conduction performance and excellent switching characteristics. Its maximum drain-source voltage (VDS) is 30V and the maximum drain current (ID) is 70A, which is very suitable for high current and low voltage power management and load switching applications. The on-resistance (RDS(ON)) of this MOSFET is 8mΩ at a gate voltage of 4.5V and 6mΩ at a gate voltage of 10V, which can ensure that the system runs at high efficiency and reduce power loss. This model of MOSFET using Trench technology has good switching speed and thermal stability, and is widely used in various low-voltage power converters, load switches, battery management and other scenarios.
**SDB85N03L-VB** is a high-efficiency N-channel MOSFET in TO263 package with excellent conduction performance and excellent switching characteristics. Its maximum drain-source voltage (VDS) is 30V and the maximum drain current (ID) is 70A, which is very suitable for high current and low voltage power management and load switching applications. The on-resistance (RDS(ON)) of this MOSFET is 8mΩ at a gate voltage of 4.5V and 6mΩ at a gate voltage of 10V, which can ensure that the system runs at high efficiency and reduce power loss. This model of MOSFET using Trench technology has good switching speed and thermal stability, and is widely used in various low-voltage power converters, load switches, battery management and other scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Model**: SDB85N03L-VB
- **Package type**: TO263
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power loss (P_D)**: 80W (typical)
- **Application areas**: power management, high power load switches, battery management systems, DC-DC converters, etc.
- **Model**: SDB85N03L-VB
- **Package type**: TO263
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power loss (P_D)**: 80W (typical)
- **Application areas**: power management, high power load switches, battery management systems, DC-DC converters, etc.
Domain and module applications：
Application fields and module examples:
1. **High-efficiency power management**: SDB85N03L-VB is widely used in high-efficiency power management modules due to its extremely low on-resistance (RDS(ON)) and high current carrying capacity. It provides efficient power conversion in DC-DC converters and AC-DC power adapters, and due to its low power consumption characteristics, it reduces heat dissipation requirements while improving energy efficiency, and is suitable for use in applications requiring high efficiency and low power consumption.
2. **Load switch and battery management system**: In the battery management system (BMS), SDB85N03L-VB can be used as a load switch or battery protection switch. It provides stable switch control during the battery charging and discharging process to ensure that the battery operates within a safe range. It is widely used in power tools, electric vehicles (EVs) and various rechargeable battery systems.
3. **Automotive electronics applications**: SDB85N03L-VB is very suitable for power management, battery protection and load switching in automotive electronic systems. Due to its high heat resistance and high current carrying capacity, it is very suitable for use in battery management modules, electric drive control units and other power control modules in automobiles, helping to achieve more efficient energy management.
4. **High-power load switching**: This MOSFET is widely used in high-power load switching due to its high current carrying capacity and low on-resistance. For example, it can be used to switch loads with large currents, such as power tools, motor control modules, etc. Its excellent conductivity and switching characteristics make it an ideal choice for efficient switching.
5. **Smart Home and IoT Devices**: In smart home and IoT devices, the SDB85N03L-VB is used as a power switch, responsible for efficiently controlling the power supply of the device. Whether it is a smart socket, wireless sensor, or home automation system, efficient power management is required, and this MOSFET can provide reliable performance at low voltage and high current.
6. **Data Center and Communication Module**: SDB85N03L-VB can also be used in power management systems in data centers, such as high-efficiency power supply, load switching modules, etc., to help reduce energy consumption and improve the overall performance of the system. In addition, it is also used in communication modules, especially in power conversion and power switching, to ensure the stability and efficiency of communication equipment.
7. **Inverter and Energy Management System**: In solar inverters, wind power generation systems and other renewable energy management systems, SDB85N03L-VB, as an efficient switching element, can provide stable and efficient power conversion in low-voltage systems. Its excellent thermal performance and low power loss make it widely used in these energy management systems.
In summary, SDB85N03L-VB is an efficient N-type MOSFET suitable for high-current and low-voltage systems. It is widely used in power management, load switching, battery management, automotive electronics and communications, and is especially suitable for applications that require high current carrying capacity and low power consumption systems.
1. **High-efficiency power management**: SDB85N03L-VB is widely used in high-efficiency power management modules due to its extremely low on-resistance (RDS(ON)) and high current carrying capacity. It provides efficient power conversion in DC-DC converters and AC-DC power adapters, and due to its low power consumption characteristics, it reduces heat dissipation requirements while improving energy efficiency, and is suitable for use in applications requiring high efficiency and low power consumption.
2. **Load switch and battery management system**: In the battery management system (BMS), SDB85N03L-VB can be used as a load switch or battery protection switch. It provides stable switch control during the battery charging and discharging process to ensure that the battery operates within a safe range. It is widely used in power tools, electric vehicles (EVs) and various rechargeable battery systems.
3. **Automotive electronics applications**: SDB85N03L-VB is very suitable for power management, battery protection and load switching in automotive electronic systems. Due to its high heat resistance and high current carrying capacity, it is very suitable for use in battery management modules, electric drive control units and other power control modules in automobiles, helping to achieve more efficient energy management.
4. **High-power load switching**: This MOSFET is widely used in high-power load switching due to its high current carrying capacity and low on-resistance. For example, it can be used to switch loads with large currents, such as power tools, motor control modules, etc. Its excellent conductivity and switching characteristics make it an ideal choice for efficient switching.
5. **Smart Home and IoT Devices**: In smart home and IoT devices, the SDB85N03L-VB is used as a power switch, responsible for efficiently controlling the power supply of the device. Whether it is a smart socket, wireless sensor, or home automation system, efficient power management is required, and this MOSFET can provide reliable performance at low voltage and high current.
6. **Data Center and Communication Module**: SDB85N03L-VB can also be used in power management systems in data centers, such as high-efficiency power supply, load switching modules, etc., to help reduce energy consumption and improve the overall performance of the system. In addition, it is also used in communication modules, especially in power conversion and power switching, to ensure the stability and efficiency of communication equipment.
7. **Inverter and Energy Management System**: In solar inverters, wind power generation systems and other renewable energy management systems, SDB85N03L-VB, as an efficient switching element, can provide stable and efficient power conversion in low-voltage systems. Its excellent thermal performance and low power loss make it widely used in these energy management systems.
In summary, SDB85N03L-VB is an efficient N-type MOSFET suitable for high-current and low-voltage systems. It is widely used in power management, load switching, battery management, automotive electronics and communications, and is especially suitable for applications that require high current carrying capacity and low power consumption systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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