Product introduction:
**
SCH2411-TL-E-VB is a bipolar N+N-type MOSFET in SC75-6 package, suitable for various low and medium power applications. This MOSFET integrates two N-type channel transistors in the same package, which can provide efficient current control and switching performance. Its maximum drain-source voltage is 60V, the maximum drain current is 0.3A, and it adopts advanced Trench technology, with excellent conduction performance and low power loss. Its threshold voltage is 1.7V, and it can work stably under low voltage drive, which is particularly suitable for application scenarios compatible with logic circuits. The on-resistance of SCH2411-TL-E-VB MOSFET is 1200mΩ at VGS = 10V. It is suitable for power management, motor drive and switch control. It is an ideal choice for low-power and high-efficiency circuit design.
**SCH2411-TL-E-VB MOSFET
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-6 |
Dual-N+N |
60V |
|
1.7V |
0.3A |
|
|
1200mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-6 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC75-6 |
Dual-N+N |
60V |
|
1.7V |
0.3A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC75-6 |
Dual-N+N |
60V |
|
1.7V |
0.3A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-6 |
Dual-N+N |
|
|
|
|
|
|
|
**
- **Package**: SC75-6
- **Configuration**: Bipolar N+N-Channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 1500mΩ (at VGS = 4.5V)
- 1200mΩ (at VGS = 10V)
- **Drain Current (ID)**: 0.3A
- **Technology**: Trench
- **Operating Temperature Range**: Typically -55°C to +150°C
- **Features**: Low on-resistance, high performance, suitable for low and medium power applications
**SCH2411-TL-E-VB MOSFET
Domain and module applications:
Examples**
1. **Power Management System**: The SCH2411-TL-E-VB can be used in power management applications, especially in low-power DC-DC converters and voltage regulator modules as a high-efficiency switching element. Its low on-resistance and high-frequency switching performance enable it to provide low power consumption and maintain high conversion efficiency, and is widely used in portable devices and low-power power modules.
2. **LED Drive Circuit**: This MOSFET also performs well in LED drive applications, and can be used to regulate the current flowing through the LED to ensure stable brightness and reduce power loss. Its low on-resistance provides efficient current control at high currents, which is particularly suitable for backlights, power tool lighting, display screens, and other indoor lighting applications.
3. **Motor Control**: In small motor control applications, the SCH2411-TL-E-VB has low power consumption and stable current control capabilities, which is suitable for equipment such as power tools, small appliances, and toys. It can be used as a switching element to control the start and stop of the motor and the regulation of the current to keep the motor in an efficient and stable working state.
4. **Automotive electronic systems**: In automotive electronic systems, SCH2411-TL-E-VB can be used in applications such as battery management systems, motor control, and load switch control to provide efficient current switching. Its low on-resistance and high switching frequency enable it to provide efficient power management in a smaller space, especially in electric vehicles (EV) and hybrid electric vehicles (HEV).
5. **Smart home devices**: SCH2411-TL-E-VB can be used in smart home devices such as smart sockets and lighting control systems to effectively control load current and reduce power consumption. Its high efficiency and low on-resistance help achieve long-term stable operation, and it is particularly suitable for battery-powered smart home products.
6. **Internet of Things (IoT) devices**: In IoT devices, SCH2411-TL-E-VB MOSFET is suitable for low-power power management and signal switching. Its low power consumption makes it particularly suitable for use with battery-powered sensors, network equipment, and monitoring equipment, helping to improve the battery life and communication efficiency of the equipment.
7. **Low-power wireless communication**: This MOSFET is suitable for wireless communication equipment, especially in low-power transmission and signal switching. SCH2411-TL-E-VB can provide fast switching in high-frequency signal environments and ensure efficient current control. It is widely used in various wireless transmission modules and radio frequency (RF) modules.
Overall, SCH2411-TL-E-VB is a high-performance MOSFET suitable for power management, LED driving, motor control, automotive electronics, smart home, IoT devices, and wireless communications. Its bipolar N+N configuration, low on-resistance, and high switching frequency make it an indispensable component in various low-power, high-efficiency electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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