Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
0.6A |
350mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-6 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC75-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
0.6A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC75-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
0.6A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-6 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS**: 20V — Maximum drain-source voltage, indicating the maximum voltage that this MOSFET can withstand.
- **VGS**: ±20V — Gate-source voltage, indicating the gate voltage range that this MOSFET can safely withstand.
- **Vth**: 0.5V to 1.5V — Threshold voltage, indicating the gate voltage range at which the MOSFET starts to turn on. This wide range enables this MOSFET to work effectively in low-voltage systems.
- **RDS(ON)**: 350mΩ (VGS=2.5V) / 300mΩ (VGS=4.5V) — Resistance when turned on, lower **RDS(ON)** values help reduce power losses and improve efficiency.
- **ID**: 0.6A — Maximum continuous drain current, indicating the maximum current that this MOSFET can carry.
- **Package**: SC75-6 — Compact surface mount package, suitable for small circuit design, especially in space-constrained devices.
- **Technology**: Trench — Trench technology is used to optimize on-resistance and switching performance, ensuring efficient current control and switching operation.
Domain and module applications:
Application Examples
1. **Battery-powered system**: **SCH2401-TL-E-VB** can be used for power management and load switching circuits in battery-powered systems. The low **RDS(ON)** feature helps reduce power loss and improve battery efficiency, especially for portable devices and small electronic products.
2. **Low voltage DC-DC converter**: This MOSFET is suitable for low voltage DC-DC converter applications, and can efficiently switch and control current, especially in power conversion applications that require high efficiency and low current.
3. **Load switch circuit**: In load switch applications, **SCH2401-TL-E-VB** can be used for switching control of low power loads, especially for LED drive circuits, smart home devices and other low power electronic modules.
4. **Smart Home System**: In smart home control systems, **SCH2401-TL-E-VB** is used as a load switch element in smart sockets, light control, sensor power management and other devices to provide efficient power control, reduce power loss and improve system response speed.
5. **Mobile and Wearable Devices**: This MOSFET can be used in power management circuits of mobile devices (such as smart watches, portable sensors, etc.), helping to extend the battery life of the device and achieve high efficiency in a small package.
6. **Automotive Electronics**: **SCH2401-TL-E-VB** is used in automotive electronics, including battery management, power control and load switching systems, providing efficient and low-loss power management solutions to ensure the stable operation of vehicle electronic systems.
In general, **SCH2401-TL-E-VB** is a **bipolar N-type MOSFET** suitable for low-voltage power management, load switching and low-power current control, especially suitable for portable electronics, smart home devices and low-current DC-DC converters. In applications requiring high efficiency and low power consumption, it can provide excellent performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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