Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-6 |
Single-P |
-30V |
|
-1.7V |
-2.4A |
|
|
32mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-6 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC75-6 |
Single-P |
-30V |
|
-1.7V |
-2.4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC75-6 |
Single-P |
-30V |
|
-1.7V |
-2.4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-6 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS**: -30V — Maximum drain-source voltage, indicating the maximum voltage that the MOSFET can withstand.
- **VGS**: ±20V — Gate-source voltage, defines the gate voltage range that the MOSFET can safely withstand.
- **Vth**: -1.7V — Threshold voltage, indicating that when the gate voltage exceeds this value, the MOSFET starts to turn on.
- **RDS(ON)**: 42mΩ (VGS=4.5V) / 32mΩ (VGS=10V) — Resistance value in the on state, low **RDS(ON)** means lower power loss and higher switching efficiency.
- **ID**: -2.4A — Maximum continuous drain current, indicating the maximum current that the MOSFET can continuously carry.
- **Package**: SC75-6 — Compact surface mount package, suitable for space-constrained circuit design.
- **Technology**: Trench — Using Trench technology to further optimize on-resistance and improve switching performance and efficiency.
Domain and module applications：
Application Examples
1. **Battery-powered system**: In mobile devices and portable electronic products, **SCH1302-TL-E-VB** can be used in battery management circuits to help improve battery efficiency and extend battery life. Low **RDS(ON)** can reduce power loss and ensure efficient operation of the battery.
2. **DC-DC converter**: This MOSFET is suitable for DC-DC converters, especially under low voltage and high efficiency requirements, to help reduce energy loss during the conversion process. Its low on-resistance and high current carrying capacity improve the overall efficiency of power conversion.
3. **Power management module**: In the power management module, **SCH1302-TL-E-VB** can be used as a switching element to optimize the overall performance of the power module. Low **RDS(ON)** reduces heat generation and improves the heat dissipation performance of the system.
4. **Load switch**: This MOSFET is widely used in battery-powered load switch circuits. Its efficient switching characteristics and low power consumption make it suitable for load switching to improve circuit efficiency and reduce heat.
5. **Smart Home System**: In the smart home power management system, **SCH1302-TL-E-VB** as a power switch can ensure low power consumption and high efficiency, especially suitable for power control of smart lamps, sensors and other smart devices.
6. **Automotive Electronics**: In automotive electronic equipment, **SCH1302-TL-E-VB** can be used in battery management and low-voltage power management systems to ensure that automotive electronic equipment operates under efficient and stable power conditions.
Overall, **SCH1302-TL-E-VB** is suitable for low-voltage power management and switching circuits that require low on-resistance, high efficiency and compact packaging. It can provide excellent performance in areas such as battery-powered devices, DC-DC converters, load switches and smart home systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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