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RZQ050P01TR-VB Product details
Back to previous pageProduct introduction：
**
RZQ050P01TR-VB is a unipolar P-channel MOSFET in SOT23-6 package with -30V drain-source voltage (VDS) and -4.8A maximum drain current (ID). The on-resistance of this MOSFET is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V. It has low conduction loss and is suitable for applications requiring efficient power control and high current switching. It uses Trench technology to provide excellent switching performance, low RDS(ON), and good thermal stability, and is widely used in power management and load drive systems.
**
RZQ050P01TR-VB is a unipolar P-channel MOSFET in SOT23-6 package with -30V drain-source voltage (VDS) and -4.8A maximum drain current (ID). The on-resistance of this MOSFET is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V. It has low conduction loss and is suitable for applications requiring efficient power control and high current switching. It uses Trench technology to provide excellent switching performance, low RDS(ON), and good thermal stability, and is widely used in power management and load drive systems.
**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
**
- **Package**: SOT23-6
- **Configuration**: Unipolar P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
**
- **Package**: SOT23-6
- **Configuration**: Unipolar P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
**
Domain and module applications：
**
The low on-resistance and high efficiency of the RZQ050P01TR-VB make it ideal for **battery management systems**, such as battery charging circuits in portable electronic devices. It enables efficient power conversion and low power losses in these systems, extending battery life. Due to its P-channel characteristics, it is also ideal for **load switching circuits**, such as providing reverse current protection and efficient current switching in portable power supplies, DC-DC converters, and other power management systems.
In **power tools** and **in-vehicle power systems**, this MOSFET can be used for **power switch management** to ensure stable power output in applications requiring high current and low losses. In addition, it can also be used in **inverter circuits**, especially in small inverters, to achieve efficient current transmission through its low RDS(ON) characteristics, thereby improving overall efficiency.
The low on-resistance and high efficiency of the RZQ050P01TR-VB make it ideal for **battery management systems**, such as battery charging circuits in portable electronic devices. It enables efficient power conversion and low power losses in these systems, extending battery life. Due to its P-channel characteristics, it is also ideal for **load switching circuits**, such as providing reverse current protection and efficient current switching in portable power supplies, DC-DC converters, and other power management systems.
In **power tools** and **in-vehicle power systems**, this MOSFET can be used for **power switch management** to ensure stable power output in applications requiring high current and low losses. In addition, it can also be used in **inverter circuits**, especially in small inverters, to achieve efficient current transmission through its low RDS(ON) characteristics, thereby improving overall efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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