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RZQ045P01TR-VB Product details
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**RZQ045P01TR-VB MOSFET - Product Introduction**
**RZQ045P01TR-VB** is a single P-channel MOSFET in SOT23-6 package, designed for low voltage and low current switching applications, suitable for applications requiring high switching efficiency and low power consumption. The drain-source voltage (VDS) of this MOSFET is -30V, and the maximum drain current (ID) is -4.8A, which is suitable for negative voltage driven circuits. Its threshold voltage (Vth) is -1.7V, which means that this MOSFET can perform effective switching operation at low voltage. The on-resistance (RDS(ON)) is 54mΩ (@VGS=4.5V) and 49mΩ (@VGS=10V). Its low on-resistance characteristic makes the device have low power loss during switching operation, which can improve the efficiency of the overall system. RZQ045P01TR-VB adopts Trench technology, has excellent switching performance and thermal performance, and is suitable for low power, low current and load switching applications.
**RZQ045P01TR-VB** is a single P-channel MOSFET in SOT23-6 package, designed for low voltage and low current switching applications, suitable for applications requiring high switching efficiency and low power consumption. The drain-source voltage (VDS) of this MOSFET is -30V, and the maximum drain current (ID) is -4.8A, which is suitable for negative voltage driven circuits. Its threshold voltage (Vth) is -1.7V, which means that this MOSFET can perform effective switching operation at low voltage. The on-resistance (RDS(ON)) is 54mΩ (@VGS=4.5V) and 49mΩ (@VGS=10V). Its low on-resistance characteristic makes the device have low power loss during switching operation, which can improve the efficiency of the overall system. RZQ045P01TR-VB adopts Trench technology, has excellent switching performance and thermal performance, and is suitable for low power, low current and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
**RZQ045P01TR-VB - Detailed parameter description**
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel MOSFET
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Operating temperature range**: -40°C ~ 150°C
- **Technology**: Trench technology (Trench MOSFET)
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel MOSFET
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Operating temperature range**: -40°C ~ 150°C
- **Technology**: Trench technology (Trench MOSFET)
Domain and module applications：
**RZQ045P01TR-VB application areas and module examples**
1. **Low-power load switch application**: As a P-channel MOSFET, RZQ045P01TR-VB performs well in low-power load switches. It can be used for power control and load on/off applications in low-voltage circuits, such as low-power sensors, micro-switching power supplies, and portable devices. Due to its low on-resistance, energy loss during the switching process is low, thereby improving system efficiency.
2. **Battery-powered devices**: The negative voltage characteristics of this MOSFET make it ideal for battery-powered devices, especially in battery management and battery protection circuits. RZQ045P01TR-VB can be used to control the battery's charge and discharge paths, protect the battery from dangerous conditions such as overvoltage and overcurrent, and reduce power loss.
3. **Load Regulation and Power Management**: RZQ045P01TR-VB can be used in power management modules as a load regulation switch in smart homes, portable devices, and low-power power systems. Its low on-resistance characteristics can reduce power consumption and improve power efficiency, and is particularly suitable for small portable devices and high-efficiency power systems.
4. **Switching Power Supply (Buck/Boost) Application**: In switching power supply systems (such as DC-DC converters), RZQ045P01TR-VB can be used as a power switching element. Its low RDS(ON) characteristics enable the system to convert power with higher efficiency, and is suitable for voltage conversion, regulated power supplies, and power factor correction (PFC) circuits.
5. **Switch Control in Negative Voltage Systems**: Since this MOSFET is a P-channel type, its application in negative voltage circuits is particularly important. It can act as an efficient switching element in negative voltage driven systems and is widely used in negative voltage power management, power tools, and devices that require negative voltage operation.
6. **Automotive electronics and smart sensor systems**: RZQ045P01TR-VB can also be used for low-power load switches in automotive electronic systems, especially in smart sensors and control modules. Its low on-resistance helps improve energy efficiency and reduce the burden on the car battery, making it suitable for automotive electronic control units (ECUs) and sensor modules.
In general, RZQ045P01TR-VB is particularly suitable for battery-powered devices, power management systems, switching power supplies, and load switches due to its low power consumption, low on-resistance, and negative voltage operating capability. It can effectively improve system efficiency and reduce energy loss, making it an ideal choice for low-power, high-efficiency circuits.
1. **Low-power load switch application**: As a P-channel MOSFET, RZQ045P01TR-VB performs well in low-power load switches. It can be used for power control and load on/off applications in low-voltage circuits, such as low-power sensors, micro-switching power supplies, and portable devices. Due to its low on-resistance, energy loss during the switching process is low, thereby improving system efficiency.
2. **Battery-powered devices**: The negative voltage characteristics of this MOSFET make it ideal for battery-powered devices, especially in battery management and battery protection circuits. RZQ045P01TR-VB can be used to control the battery's charge and discharge paths, protect the battery from dangerous conditions such as overvoltage and overcurrent, and reduce power loss.
3. **Load Regulation and Power Management**: RZQ045P01TR-VB can be used in power management modules as a load regulation switch in smart homes, portable devices, and low-power power systems. Its low on-resistance characteristics can reduce power consumption and improve power efficiency, and is particularly suitable for small portable devices and high-efficiency power systems.
4. **Switching Power Supply (Buck/Boost) Application**: In switching power supply systems (such as DC-DC converters), RZQ045P01TR-VB can be used as a power switching element. Its low RDS(ON) characteristics enable the system to convert power with higher efficiency, and is suitable for voltage conversion, regulated power supplies, and power factor correction (PFC) circuits.
5. **Switch Control in Negative Voltage Systems**: Since this MOSFET is a P-channel type, its application in negative voltage circuits is particularly important. It can act as an efficient switching element in negative voltage driven systems and is widely used in negative voltage power management, power tools, and devices that require negative voltage operation.
6. **Automotive electronics and smart sensor systems**: RZQ045P01TR-VB can also be used for low-power load switches in automotive electronic systems, especially in smart sensors and control modules. Its low on-resistance helps improve energy efficiency and reduce the burden on the car battery, making it suitable for automotive electronic control units (ECUs) and sensor modules.
In general, RZQ045P01TR-VB is particularly suitable for battery-powered devices, power management systems, switching power supplies, and load switches due to its low power consumption, low on-resistance, and negative voltage operating capability. It can effectively improve system efficiency and reduce energy loss, making it an ideal choice for low-power, high-efficiency circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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