Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
100mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-3 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-3 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS**: -20V — Maximum drain-source voltage, indicating the maximum voltage that the MOSFET can withstand.
- **VGS**: ±12V — Gate-source voltage, defining the gate voltage range that the MOSFET can safely withstand.
- **Vth**: -0.6V — Threshold voltage, when the gate-source voltage reaches this value, the MOSFET starts to turn on.
- **RDS(ON)**: 100mΩ (VGS=2.5V) / 80mΩ (VGS=4.5V) — Resistance value in the on state, directly affects efficiency and heat generation during operation.
- **ID**: -3.1A — Maximum continuous drain current, indicating the maximum current that the MOSFET can withstand without being damaged.
- **Package**: SC70-3 — A compact 3-pin surface mount package, ideal for space-constrained applications.
Domain and module applications：
Application Examples
1. **Portable Electronics**: Suitable for mobile devices such as smartphones and tablets, meeting the need for high-efficiency power switches while achieving compact designs.
2. **Battery-Powered Systems**: Particularly suitable for power management circuits in battery-powered devices, helping to optimize battery life and reduce energy losses.
3. **Load Switch**: Can be used in low-voltage load switching circuits, where the MOSFET’s low **RDS(ON)** helps reduce voltage drop and power loss.
4. **Power Management Module**: Suitable for power regulation systems such as DC-DC converters, ensuring efficient power conversion, especially for compact designs.
This MOSFET is particularly suitable for low-voltage, high-efficiency circuits, especially in applications where compact size and low power loss are strictly required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
