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RYM002N05-VB Product details
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Product Introduction - RYM002N05-VB
RYM002N05-VB is a unipolar N-channel MOSFET in SOT723-3 package, designed for low and medium power applications. Its maximum drain-source voltage (VDS) is 60V, which is suitable for most low-voltage power management systems and load switching applications. The threshold voltage (Vth) of this MOSFET is 0.3V, which is suitable for low-voltage drive systems. Although its on-resistance (RDS(ON)) is high, RYM002N05-VB can still provide sufficient switching performance for scenarios that require low current (maximum drain current of 0.25A) and relatively small current demand. It uses Trench technology, has good stability and low power consumption, and is very suitable for low-power, small circuits.
RYM002N05-VB is a unipolar N-channel MOSFET in SOT723-3 package, designed for low and medium power applications. Its maximum drain-source voltage (VDS) is 60V, which is suitable for most low-voltage power management systems and load switching applications. The threshold voltage (Vth) of this MOSFET is 0.3V, which is suitable for low-voltage drive systems. Although its on-resistance (RDS(ON)) is high, RYM002N05-VB can still provide sufficient switching performance for scenarios that require low current (maximum drain current of 0.25A) and relatively small current demand. It uses Trench technology, has good stability and low power consumption, and is very suitable for low-power, small circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 60V | 0.3V | 0.25A | 1100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 60V | 0.3V | 0.25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 60V | 0.3V | 0.25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
Detailed parameter description
- **Package type**: SOT723-3
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.3V
- **On-resistance (RDS(ON))**:
- 1375mΩ @ VGS = 4.5V
- 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.25A
- **Technology**: Trench technology
- **Package type**: SOT723-3
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.3V
- **On-resistance (RDS(ON))**:
- 1375mΩ @ VGS = 4.5V
- 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.25A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Low-power power management**:
Due to its moderate threshold voltage (0.3V) and on-resistance, RYM002N05-VB is very suitable for low-power power management applications. In small power systems, it can be used as a switch control element for power switching in low-voltage environments. Suitable for devices such as mobile phone chargers and low-power adapters.
2. **Portable electronic devices**:
In portable devices such as Bluetooth headsets, smart watches, health monitoring devices, etc., this MOSFET can be used for battery power management and power control. Due to its small package (SOT723-3) and low operating current requirements, it is suitable for use in space-constrained devices with low power requirements.
3. **Battery Management System (BMS)**:
RYM002N05-VB can be used for battery switch control, current protection, and load switching in battery management systems. It is suitable for low-power, low-current systems to ensure healthy battery management, and is particularly suitable for small battery modules and low-voltage battery protection circuits.
4. **Low current load switch**:
In low-current load switch applications, RYM002N05-VB can be used as a switch control element for various small electronic load switches due to its low switching threshold voltage and moderate on-resistance. For example, it can be found in sensor power supply control, micro motor drive, and simple switching circuits.
5. **Analog circuits and signal processing**:
This MOSFET is also suitable for some low-power analog circuits and signal processing modules, especially in small signal processing situations that require efficient switching. For example, it is suitable for small amplifier circuits and sensor signal processing modules, and current control is performed through its precise switching performance.
These application examples show that RYM002N05-VB is suitable for low-power, low-current electronic devices and systems, especially in situations where miniaturization and high efficiency are required, and is particularly suitable for battery management, low-voltage power control and small portable devices.
1. **Low-power power management**:
Due to its moderate threshold voltage (0.3V) and on-resistance, RYM002N05-VB is very suitable for low-power power management applications. In small power systems, it can be used as a switch control element for power switching in low-voltage environments. Suitable for devices such as mobile phone chargers and low-power adapters.
2. **Portable electronic devices**:
In portable devices such as Bluetooth headsets, smart watches, health monitoring devices, etc., this MOSFET can be used for battery power management and power control. Due to its small package (SOT723-3) and low operating current requirements, it is suitable for use in space-constrained devices with low power requirements.
3. **Battery Management System (BMS)**:
RYM002N05-VB can be used for battery switch control, current protection, and load switching in battery management systems. It is suitable for low-power, low-current systems to ensure healthy battery management, and is particularly suitable for small battery modules and low-voltage battery protection circuits.
4. **Low current load switch**:
In low-current load switch applications, RYM002N05-VB can be used as a switch control element for various small electronic load switches due to its low switching threshold voltage and moderate on-resistance. For example, it can be found in sensor power supply control, micro motor drive, and simple switching circuits.
5. **Analog circuits and signal processing**:
This MOSFET is also suitable for some low-power analog circuits and signal processing modules, especially in small signal processing situations that require efficient switching. For example, it is suitable for small amplifier circuits and sensor signal processing modules, and current control is performed through its precise switching performance.
These application examples show that RYM002N05-VB is suitable for low-power, low-current electronic devices and systems, especially in situations where miniaturization and high efficiency are required, and is particularly suitable for battery management, low-voltage power control and small portable devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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