Product introduction：
Product Introduction:
**RW1A030AP-VB** is a high-efficiency P-channel MOSFET in SC75-6 package, designed for low voltage and miniaturized applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, which can provide stable operating performance. Its maximum drain current (ID) is -2.4A, which is suitable for occasions with smaller current loads. The on-resistance of RW1A030AP-VB is 42mΩ at a gate voltage of 4.5V, and is even lower at a gate voltage of 10V, reaching 32mΩ. Low on-resistance can effectively reduce conduction losses and improve circuit efficiency. Using Trench technology, it provides excellent switching characteristics and thermal management, making it perform well in a variety of electronic applications.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-6 |
Single-P |
-30V |
|
-1.7V |
-2.4A |
|
|
32mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-6 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC75-6 |
Single-P |
-30V |
|
-1.7V |
-2.4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC75-6 |
Single-P |
-30V |
|
-1.7V |
-2.4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-6 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description:
- **Model**: RW1A030AP-VB
- **Package type**: SC75-6
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 42mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -2.4A
- **Technology**: Trench
- **Operating temperature range**: Suitable for wide temperature range environment
- **Application areas**: Low power consumption, high-efficiency power supply, electric equipment, etc.
Domain and module applications：
Applications and module examples:
1. **Power Management and DC-DC Converters**: Due to its low on-resistance, the RW1A030AP-VB is well suited for use in DC-DC converters and power management modules, especially in applications that require efficient power conversion and low conduction losses. Its small package and low power consumption make it an ideal choice for these applications.
2. **Portable Electronics**: The RW1A030AP-VB is well suited for use in portable electronic products such as smartphones, Bluetooth headsets, portable audio, etc. Its compact SC75-6 package is suitable for designs with limited space, while its low on-resistance helps extend battery life and improve the energy efficiency of the device.
3. **Automotive Electronics**: In automotive electronic systems, especially in power management systems, drive circuits, and battery management modules for electric and hybrid vehicles, the RW1A030AP-VB can be used as an efficient switching element to help improve power conversion efficiency, reduce energy losses, and improve battery life.
4. **Load switch and battery protection circuit**: This MOSFET is particularly suitable for battery protection circuit and load switch applications. Due to its low on-resistance, it can reduce power loss in the current path and is very suitable for applications that require long working hours and are sensitive to power consumption.
5. **Low-voltage switch and current control module**: RW1A030AP-VB is widely used in low-voltage systems, such as low-voltage drive circuits or load control modules. It can provide stable switching operation and is suitable for circuit designs that require small size, high efficiency and low conduction loss.
6. **Smart home equipment**: This MOSFET is suitable for smart home devices, such as smart sockets, smart light controllers, etc., where efficient current control is required. Its low on-resistance characteristics can effectively reduce heat generation and improve the stability and reliability of the equipment.
Through the above application examples, RW1A030AP-VB MOSFET is a versatile, high-efficiency P-type MOSFET, suitable for low-power and miniaturized electronic devices, especially in power management, battery protection and low-voltage control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
