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RUS4510K-VB Product details
Back to previous pageProduct introduction：
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RUS4510K-VB is a unipolar N-channel MOSFET in TO251 package with 40V drain-source voltage (VDS) and 55A maximum drain current (ID). The on-resistance of this MOSFET is very low, 14mΩ at VGS=4.5V and 13mΩ at VGS=10V. It has low power loss and high current transfer capability, suitable for power management applications that require high efficiency and miniaturization. The use of Trench technology makes this MOSFET excellent in switching speed, thermal efficiency and current carrying capacity, making it an ideal choice for wide use in high-efficiency power supplies and load drive systems.
**
RUS4510K-VB is a unipolar N-channel MOSFET in TO251 package with 40V drain-source voltage (VDS) and 55A maximum drain current (ID). The on-resistance of this MOSFET is very low, 14mΩ at VGS=4.5V and 13mΩ at VGS=10V. It has low power loss and high current transfer capability, suitable for power management applications that require high efficiency and miniaturization. The use of Trench technology makes this MOSFET excellent in switching speed, thermal efficiency and current carrying capacity, making it an ideal choice for wide use in high-efficiency power supplies and load drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
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- **Package**: TO251
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **Maximum drain current (ID)**: 55A
- **Technology**: Trench technology
**
- **Package**: TO251
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **Maximum drain current (ID)**: 55A
- **Technology**: Trench technology
**
Domain and module applications：
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RUS4510K-VB is suitable for multiple high-efficiency power conversion and load drive systems. In **DC-DC power converters**, it can provide efficient current transmission, effectively reduce conduction losses, and improve system efficiency. It is also very suitable for **battery management systems**, such as in portable battery packs and power tools, where it can provide stable voltage and current to ensure efficient operation of the equipment. Another typical application is in the field of **automotive electronics**, especially in power control and battery charge and discharge management systems for electric vehicles, to provide reliable power switching. The low RDS(ON) characteristics and high current carrying capacity of this MOSFET enable it to play a role in **motor drive systems**, **LED drive power supplies**, etc. in the industrial and consumer electronics fields, ensuring high efficiency and long-term stable operation.
RUS4510K-VB is suitable for multiple high-efficiency power conversion and load drive systems. In **DC-DC power converters**, it can provide efficient current transmission, effectively reduce conduction losses, and improve system efficiency. It is also very suitable for **battery management systems**, such as in portable battery packs and power tools, where it can provide stable voltage and current to ensure efficient operation of the equipment. Another typical application is in the field of **automotive electronics**, especially in power control and battery charge and discharge management systems for electric vehicles, to provide reliable power switching. The low RDS(ON) characteristics and high current carrying capacity of this MOSFET enable it to play a role in **motor drive systems**, **LED drive power supplies**, etc. in the industrial and consumer electronics fields, ensuring high efficiency and long-term stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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