中文
English
RUM003N02-VB Product details
Back to previous pageProduct introduction：
RUM003N02-VB MOSFET - Product Introduction
RUM003N02-VB is a unipolar N-channel MOSFET in SOT723-3 package, suitable for low voltage, low power power control and switching applications. Its maximum drain-source voltage (V_DS) is 20V, and the gate-source voltage (V_GS) can withstand a maximum of 20V. The threshold voltage (V_th) of this MOSFET is 0.45V, and it has a low on-resistance of 337.5mΩ (at V_GS = 4.5V) and 270mΩ (at V_GS = 10V). The maximum continuous drain current (I_D) is 0.65A, and Trench technology is used to provide low conduction losses and efficient current switching control. RUM003N02-VB is suitable for low power drive systems and various applications requiring miniaturized design.
RUM003N02-VB is a unipolar N-channel MOSFET in SOT723-3 package, suitable for low voltage, low power power control and switching applications. Its maximum drain-source voltage (V_DS) is 20V, and the gate-source voltage (V_GS) can withstand a maximum of 20V. The threshold voltage (V_th) of this MOSFET is 0.45V, and it has a low on-resistance of 337.5mΩ (at V_GS = 4.5V) and 270mΩ (at V_GS = 10V). The maximum continuous drain current (I_D) is 0.65A, and Trench technology is used to provide low conduction losses and efficient current switching control. RUM003N02-VB is suitable for low power drive systems and various applications requiring miniaturized design.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
RUM003N02-VB MOSFET - Detailed Parameter Description
| Parameters | Description|
|--------------------------|----------------------------------------------------|
| **Package** | SOT723-3 Package|
| **Configuration** | Single-N-Channel |
| **Maximum Drain-Source Voltage (V_DS)** | 20V |
| **Maximum Gate-Source Voltage (V_GS)** | ±20V |
| **Threshold Voltage (V_th)** | 0.45V |
| **On-Resistance (R_DS(ON))** | 337.5mΩ (at V_GS = 4.5V), 270mΩ (at V_GS = 10V) |
| **Maximum Drain Current (I_D)** | 0.65A |
| **Technology** | Trench Technology|
| Parameters | Description|
|--------------------------|----------------------------------------------------|
| **Package** | SOT723-3 Package|
| **Configuration** | Single-N-Channel |
| **Maximum Drain-Source Voltage (V_DS)** | 20V |
| **Maximum Gate-Source Voltage (V_GS)** | ±20V |
| **Threshold Voltage (V_th)** | 0.45V |
| **On-Resistance (R_DS(ON))** | 337.5mΩ (at V_GS = 4.5V), 270mΩ (at V_GS = 10V) |
| **Maximum Drain Current (I_D)** | 0.65A |
| **Technology** | Trench Technology|
Domain and module applications：
RUM003N02-VB MOSFET - Applications and Module Examples
The small package and low on-resistance of RUM003N02-VB make it very suitable for low-power, high-efficiency power control systems, especially where small size and good thermal performance are required. Here are some typical applications:
1. **Low-power switching power supply**
RUM003N02-VB is very effective in small, low-power switching power supplies such as LED driver power supplies, mobile phone chargers, etc. Its low on-resistance helps reduce energy losses, thereby improving efficiency and extending product life. This MOSFET is an ideal choice, especially in applications where the device requires high performance but is space-constrained.
2. **Portable electronic devices**
In portable electronic devices such as smart watches, wireless headphones, portable battery packs, etc., RUM003N02-VB can be used in power management modules. Due to its low threshold voltage (V_th = 0.45V), it can achieve efficient switching operation at lower voltages, which is critical for extending battery life.
3. **Battery Management System (BMS)**
In battery management systems, especially low-voltage lithium battery pack management applications, RUM003N02-VB can efficiently control the charging and discharging process. Its low on-resistance characteristics reduce power losses and improve the overall efficiency and battery life.
4. **Smart Home Devices**
This MOSFET can also be used for power management of smart home devices such as smart lamps, sensor modules and temperature control devices. Its small package makes it suitable for compact spaces while providing sufficient current capability and low heat generation to keep the device running stably.
5. **Wireless Communication Module**
In wireless communication modules, RUM003N02-VB can be used as an efficient switching element to handle low-power signal modulation and transmission. It can respond quickly and provide reliable current control, and is widely used in low-power wireless devices such as Bluetooth devices, Zigbee sensors and smart home appliances.
6. **Automation control system**
This MOSFET can also be used in switching circuits of small motor control, micro pumps and other low-power automation systems. Due to its low voltage characteristics and high switching efficiency, it is suitable for efficient power switching in micro devices.
The small package and low on-resistance of RUM003N02-VB make it very suitable for low-power, high-efficiency power control systems, especially where small size and good thermal performance are required. Here are some typical applications:
1. **Low-power switching power supply**
RUM003N02-VB is very effective in small, low-power switching power supplies such as LED driver power supplies, mobile phone chargers, etc. Its low on-resistance helps reduce energy losses, thereby improving efficiency and extending product life. This MOSFET is an ideal choice, especially in applications where the device requires high performance but is space-constrained.
2. **Portable electronic devices**
In portable electronic devices such as smart watches, wireless headphones, portable battery packs, etc., RUM003N02-VB can be used in power management modules. Due to its low threshold voltage (V_th = 0.45V), it can achieve efficient switching operation at lower voltages, which is critical for extending battery life.
3. **Battery Management System (BMS)**
In battery management systems, especially low-voltage lithium battery pack management applications, RUM003N02-VB can efficiently control the charging and discharging process. Its low on-resistance characteristics reduce power losses and improve the overall efficiency and battery life.
4. **Smart Home Devices**
This MOSFET can also be used for power management of smart home devices such as smart lamps, sensor modules and temperature control devices. Its small package makes it suitable for compact spaces while providing sufficient current capability and low heat generation to keep the device running stably.
5. **Wireless Communication Module**
In wireless communication modules, RUM003N02-VB can be used as an efficient switching element to handle low-power signal modulation and transmission. It can respond quickly and provide reliable current control, and is widely used in low-power wireless devices such as Bluetooth devices, Zigbee sensors and smart home appliances.
6. **Automation control system**
This MOSFET can also be used in switching circuits of small motor control, micro pumps and other low-power automation systems. Due to its low voltage characteristics and high switching efficiency, it is suitable for efficient power switching in micro devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
