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RUM002N05-VB Product details
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**RUM002N05-VB MOSFET - Product Introduction**
**RUM002N05-VB** is a single N-channel MOSFET in a SOT723-3 package, designed for low-power applications, suitable for electronic circuits that require small packages and low current control. Its drain-source voltage (VDS) is 60V and its maximum drain current (ID) is 0.25A, suitable for low-current switching applications. The threshold voltage (Vth) of this MOSFET is 0.3V, which enables it to be turned on at a lower gate voltage. With an on-resistance (RDS(ON)) of 1375mΩ (@VGS=4.5V) and 1100mΩ (@VGS=10V), the device still performs well under low power and low current conditions despite the high on-resistance. It uses Trench technology to ensure relatively low switching losses, suitable for low-power circuit applications such as sensors, portable devices, low-power signal amplification, etc.
**RUM002N05-VB** is a single N-channel MOSFET in a SOT723-3 package, designed for low-power applications, suitable for electronic circuits that require small packages and low current control. Its drain-source voltage (VDS) is 60V and its maximum drain current (ID) is 0.25A, suitable for low-current switching applications. The threshold voltage (Vth) of this MOSFET is 0.3V, which enables it to be turned on at a lower gate voltage. With an on-resistance (RDS(ON)) of 1375mΩ (@VGS=4.5V) and 1100mΩ (@VGS=10V), the device still performs well under low power and low current conditions despite the high on-resistance. It uses Trench technology to ensure relatively low switching losses, suitable for low-power circuit applications such as sensors, portable devices, low-power signal amplification, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 60V | 0.3V | 0.25A | 1100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 60V | 0.3V | 0.25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 60V | 0.3V | 0.25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
**RUM002N05-VB - Detailed parameter description**
- **Package**: SOT723-3
- **Configuration**: Single-N-Channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.3V
- **On-resistance (RDS(ON))**:
- 1375mΩ @ VGS = 4.5V
- 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.25A
- **Operating temperature range**: -40°C ~ 125°C
- **Technology**: Trench technology (Trench MOSFET)
- **Package**: SOT723-3
- **Configuration**: Single-N-Channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.3V
- **On-resistance (RDS(ON))**:
- 1375mΩ @ VGS = 4.5V
- 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.25A
- **Operating temperature range**: -40°C ~ 125°C
- **Technology**: Trench technology (Trench MOSFET)
Domain and module applications：
**RUM002N05-VB Application Fields and Module Examples**
1. **Low-power sensor applications**: Due to its low leakage current and low operating current, the RUM002N05-VB is well suited for low-power sensor circuits. In these applications, MOSFETs are used for signal switching and amplification, while its low gate drive requirements allow it to work in energy-constrained devices such as smart home sensors, environmental monitoring sensors, etc.
2. **Portable consumer electronics devices**: The small package (SOT723-3) of this MOSFET makes it ideal for low-power power switches, overvoltage protection, and battery management systems in portable electronic devices. It can provide efficient switching and control in a limited space, suitable for small battery-driven devices such as wireless headphones and smart watches.
3. **Low-power signal amplifier circuit**: In low-power signal processing circuits, the RUM002N05-VB can be used as a switching element or input driver for amplifiers, and is widely used in audio amplifiers, sensor drive circuits, and other signal amplification applications that require high efficiency and low current.
4. **Low-current switching applications**: Due to its low maximum drain current (ID=0.25A), RUM002N05-VB is suitable for low-current switching circuits such as wireless remote controls, micro electronic switches, and high-efficiency low-power electronic circuits.
5. **Low-voltage logic circuits**: The low threshold voltage (Vth = 0.3V) of this MOSFET makes it suitable for circuits that require precise logic level control, such as embedded systems and microcontroller interface circuits. It can switch efficiently at low voltages for control and drive in low-power micro systems.
6. **Battery management system**: RUM002N05-VB can be used as a switching element in a battery management system to control the charging and discharging process. Its low on-resistance and threshold voltage enable it to reduce power consumption and improve battery efficiency in battery management circuits.
In general, the RUM002N05-VB MOSFET is very suitable for low-current, low-power electronic products due to its small package, low-power characteristics and high drain-source voltage, especially in portable electronic devices and low-power sensor systems.
1. **Low-power sensor applications**: Due to its low leakage current and low operating current, the RUM002N05-VB is well suited for low-power sensor circuits. In these applications, MOSFETs are used for signal switching and amplification, while its low gate drive requirements allow it to work in energy-constrained devices such as smart home sensors, environmental monitoring sensors, etc.
2. **Portable consumer electronics devices**: The small package (SOT723-3) of this MOSFET makes it ideal for low-power power switches, overvoltage protection, and battery management systems in portable electronic devices. It can provide efficient switching and control in a limited space, suitable for small battery-driven devices such as wireless headphones and smart watches.
3. **Low-power signal amplifier circuit**: In low-power signal processing circuits, the RUM002N05-VB can be used as a switching element or input driver for amplifiers, and is widely used in audio amplifiers, sensor drive circuits, and other signal amplification applications that require high efficiency and low current.
4. **Low-current switching applications**: Due to its low maximum drain current (ID=0.25A), RUM002N05-VB is suitable for low-current switching circuits such as wireless remote controls, micro electronic switches, and high-efficiency low-power electronic circuits.
5. **Low-voltage logic circuits**: The low threshold voltage (Vth = 0.3V) of this MOSFET makes it suitable for circuits that require precise logic level control, such as embedded systems and microcontroller interface circuits. It can switch efficiently at low voltages for control and drive in low-power micro systems.
6. **Battery management system**: RUM002N05-VB can be used as a switching element in a battery management system to control the charging and discharging process. Its low on-resistance and threshold voltage enable it to reduce power consumption and improve battery efficiency in battery management circuits.
In general, the RUM002N05-VB MOSFET is very suitable for low-current, low-power electronic products due to its small package, low-power characteristics and high drain-source voltage, especially in portable electronic devices and low-power sensor systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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