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RUM002N02-VB Product details
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Product Introduction (RUM002N02-VB MOSFET)
RUM002N02-VB is a small N-channel MOSFET in SOT723-3 package with low on-resistance and fast switching characteristics. Its maximum drain-source voltage (VDS) is 20V and the maximum gate-source voltage (VGS) is ±20V, which is suitable for low-voltage, low-power switching circuits. The threshold voltage (Vth) of RUM002N02-VB is 0.45V, which can start at low voltage and has good conduction performance. The on-resistance (RDS(ON)) of this MOSFET is 337.5mΩ (at VGS=4.5V) and 270mΩ (at VGS=10V), respectively, providing high-efficiency power management capabilities for low-power applications. The maximum drain current (ID) is 0.65A, which is suitable for high-frequency, low-power devices, especially in the fields of smart small electronic devices, load switches, protection circuits and battery management.
RUM002N02-VB is a small N-channel MOSFET in SOT723-3 package with low on-resistance and fast switching characteristics. Its maximum drain-source voltage (VDS) is 20V and the maximum gate-source voltage (VGS) is ±20V, which is suitable for low-voltage, low-power switching circuits. The threshold voltage (Vth) of RUM002N02-VB is 0.45V, which can start at low voltage and has good conduction performance. The on-resistance (RDS(ON)) of this MOSFET is 337.5mΩ (at VGS=4.5V) and 270mΩ (at VGS=10V), respectively, providing high-efficiency power management capabilities for low-power applications. The maximum drain current (ID) is 0.65A, which is suitable for high-frequency, low-power devices, especially in the fields of smart small electronic devices, load switches, protection circuits and battery management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
Detailed parameter description
- **Model**: RUM002N02-VB
- **Package type**: SOT723-3
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.45V
- **On-resistance (RDS(ON)）**:
- 337.5mΩ @ VGS=4.5V
- 270mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.65A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power loss**: 0.5W (depending on the heat dissipation conditions)
- **Model**: RUM002N02-VB
- **Package type**: SOT723-3
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.45V
- **On-resistance (RDS(ON)）**:
- 337.5mΩ @ VGS=4.5V
- 270mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.65A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power loss**: 0.5W (depending on the heat dissipation conditions)
Domain and module applications：
Typical Applications and Modules
1. **Low-power Switching Circuits**
- Due to its low on-resistance and efficient switching characteristics, RUM002N02-VB is very suitable for use in low-power switching circuits. It can efficiently control the flow of current and reduce energy loss, and is suitable for the control of various low-power devices.
- **Application Examples**: In smart watches or small sensor devices, MOSFET can be used as a power switch to control the on and off state of the device, thereby extending battery life.
2. **Battery Management System (BMS)**
- RUM002N02-VB is suitable for use in battery management systems (BMS), especially for low-voltage applications that require efficient power management. It can be used for battery charging and discharging protection to ensure stable operation of the system and safe use of the battery.
- **Application Examples**: In portable electronic devices such as smart headphones or portable battery packs, this MOSFET acts as a switching element to help manage the battery charging process and effectively prevent overcharging or over-discharging.
3. **Load Switch**
- The low on-resistance of the RUM002N02-VB makes it an excellent choice for load switch applications, especially in intelligent power management systems, where it can switch quickly and provide a low-loss current path.
- **Application Examples**: In low-power circuits such as LED drivers, digital circuits, or sensor modules, MOSFETs can control the switching of loads to ensure efficient current supply.
4. **Overcurrent Protection Circuit**
- The MOSFET can also be used as a switching element in an overcurrent protection circuit. With its low on-resistance and fast response characteristics, it can quickly cut off the current flow when the current exceeds the preset value, protecting other components from damage.
- **Application Examples**: In small power modules and portable devices, MOSFETs can work together with other protection circuits to protect the battery, motherboard, or external interfaces from damage when the current is too large.
5. **Wireless Communication Module**
- The RUM002N02-VB is ideal for low-power wireless communication modules. Its low threshold voltage enables it to operate at low voltage, making it suitable for short-range wireless communication applications such as Bluetooth and ZigBee.
- **Application Example**: In wireless sensor networks, MOSFETs can be used for signal modulation and power management to ensure efficient and stable operation of devices in high-frequency operations.
1. **Low-power Switching Circuits**
- Due to its low on-resistance and efficient switching characteristics, RUM002N02-VB is very suitable for use in low-power switching circuits. It can efficiently control the flow of current and reduce energy loss, and is suitable for the control of various low-power devices.
- **Application Examples**: In smart watches or small sensor devices, MOSFET can be used as a power switch to control the on and off state of the device, thereby extending battery life.
2. **Battery Management System (BMS)**
- RUM002N02-VB is suitable for use in battery management systems (BMS), especially for low-voltage applications that require efficient power management. It can be used for battery charging and discharging protection to ensure stable operation of the system and safe use of the battery.
- **Application Examples**: In portable electronic devices such as smart headphones or portable battery packs, this MOSFET acts as a switching element to help manage the battery charging process and effectively prevent overcharging or over-discharging.
3. **Load Switch**
- The low on-resistance of the RUM002N02-VB makes it an excellent choice for load switch applications, especially in intelligent power management systems, where it can switch quickly and provide a low-loss current path.
- **Application Examples**: In low-power circuits such as LED drivers, digital circuits, or sensor modules, MOSFETs can control the switching of loads to ensure efficient current supply.
4. **Overcurrent Protection Circuit**
- The MOSFET can also be used as a switching element in an overcurrent protection circuit. With its low on-resistance and fast response characteristics, it can quickly cut off the current flow when the current exceeds the preset value, protecting other components from damage.
- **Application Examples**: In small power modules and portable devices, MOSFETs can work together with other protection circuits to protect the battery, motherboard, or external interfaces from damage when the current is too large.
5. **Wireless Communication Module**
- The RUM002N02-VB is ideal for low-power wireless communication modules. Its low threshold voltage enables it to operate at low voltage, making it suitable for short-range wireless communication applications such as Bluetooth and ZigBee.
- **Application Example**: In wireless sensor networks, MOSFETs can be used for signal modulation and power management to ensure efficient and stable operation of devices in high-frequency operations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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