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RUH3051M-VB Product details

Product introduction:

RUH3051M-VB MOSFET - Product Introduction

The RUH3051M-VB is a high-performance unipolar N-channel MOSFET in a DFN8 (5x6) package, designed for high-efficiency power conversion and high-current applications. Its maximum drain-source voltage (V_DS) is 30V, and its gate-source voltage (V_GS) can withstand a maximum of 20V. The threshold voltage (V_th) of this MOSFET is 1.7V, and it has a very low on-resistance of 5mΩ (at V_GS = 4.5V) and 3mΩ (at V_GS = 10V). Its maximum continuous drain current (I_D) is 120A, and it uses Trench technology to provide low conduction losses and high-efficiency power conversion. This product is ideal for applications requiring high efficiency and high power density.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
RUH3051M-VB MOSFET - Detailed Parameters

| Parameters | Description |
|--------------------------|----------------------------------------------------|
| **Package** | DFN8 (5x6) Package|
| **Configuration** | Single-N-Channel |
| **Maximum Drain-Source Voltage (V_DS)** | 30V |
| **Maximum Gate-Source Voltage (V_GS)** | ±20V |
| **Threshold Voltage (V_th)** | 1.7V |
| **On-Resistance (R_DS(ON))** | 5mΩ (at V_GS = 4.5V), 3mΩ (at V_GS = 10V) |
| **Maximum Drain Current (I_D)** | 120A |
| **Technology** | Trench Technology|

Domain and module applications:

RUH3051M-VB MOSFET - Applications and Module Examples

The low on-resistance, high current carrying capacity and compact package design of RUH3051M-VB make it widely applicable in multiple high-performance, high-power density applications. Here are some typical application examples:

1. **Power Management System**
RUH3051M-VB is very suitable for efficient power management systems, especially in battery management systems for portable devices and small electronic products. Low on-resistance can effectively reduce power loss, extend battery life, and improve overall energy efficiency. It is suitable for power conversion modules of devices such as smartphones, laptops, and tablets.

2. **Power Tools and Electric Drive Systems**
In electric drive systems such as power tools, drones, and electric bicycles, RUH3051M-VB can provide efficient current control, help optimize the efficiency of the motor drive system, reduce heat loss, and enhance the stability and endurance of the equipment.

3. **Automotive Electronics and Battery Management System (BMS)**
This MOSFET can be used in the battery management system (BMS) of electric vehicles (EV) and hybrid electric vehicles (HEV) to handle the high current during battery charging and discharging. RUH3051M-VB can provide efficient current control under the requirements of miniaturized design to ensure the stable and safe operation of the battery system.

4. **DC-DC Converter and Power Conditioning System**
In various power systems, especially DC-DC converters, buck or boost circuits, RUH3051M-VB can provide stable and efficient power supply to the load. Due to its low R_DS(ON) and high current handling capability, it is very suitable for high-efficiency power conversion applications such as server power supplies, industrial power supplies, etc.

5. **Wireless Charging and High-Frequency Power Transmission**
In wireless charging technology or high-frequency power transmission systems, RUH3051M-VB can provide low conduction loss and efficient switching characteristics, support fast charging process, and is suitable for smartphones, electronic devices and other wireless charging solutions.

6. **Automotive Inverter and Power Amplifier**
In inverter and power amplifier applications, RUH3051M-VB can also be used as a high-efficiency switching element. Its fast response characteristics and low on-resistance help reduce power loss and improve overall efficiency. It is widely used in automotive power inverters and other high-power application scenarios.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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