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RUH1H100R-VB Product details

Product introduction:

Product Introduction (RUH1H100R-VB MOSFET)

RUH1H100R-VB is a high-performance N-channel MOSFET in a TO220 package suitable for high-power applications. With a maximum drain-source voltage (VDS) of 100V and a maximum gate-source voltage (VGS) of ±20V, this MOSFET has good switching characteristics and is particularly suitable for electronic circuits that require high current carrying capacity and low conduction losses. The on-resistance (RDS(ON)) of RUH1H100R-VB is 5mΩ@VGS=10V, which can significantly reduce switching losses and improve system efficiency. Its maximum drain current (ID) of 120A makes it suitable for high-power applications such as high-efficiency power management, power tools, industrial drive systems, and battery management systems. The device uses Trench technology to provide low on-resistance and fast switching response, and is widely used in power conversion and power management modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 3V 120A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Model**: RUH1H100R-VB
- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ@VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power loss**: 150W (depending on the heat dissipation conditions)
- **Junction temperature**: 150°C (max)

Domain and module applications:

Typical Application Areas and Modules

1. **Switching Power Supply (SMPS)**
- RUH1H100R-VB is widely used in high-efficiency switching power supplies (such as AC-DC power supplies, DC-DC converters), capable of handling high voltage and high current, providing low on-resistance and high switching frequency, significantly improving system efficiency.
- **Application Example**: In industrial equipment or communication power supply systems, RUH1H100R-VB can effectively reduce switching losses, improve energy conversion efficiency, and ensure the stability and reliability of the power supply.

2. **Power Tool and Electric Vehicle Battery Management System**
- This MOSFET can withstand large currents and operate at high frequencies in applications such as power tools and electric vehicles, optimizing the power conversion process and extending the battery life.
- **Application Example**: In the battery management system of power tools, RUH1H100R-VB can be used as a power switching device to provide efficient power transmission, reduce energy loss, and increase the working time of the tool.

3. **Motor Drive Systems**
- The RUH1H100R-VB excels in motor drive applications, especially for efficient driving of high-power motors. Its high current carrying capacity makes it suitable for use in a variety of motor control systems.
- **Application Examples**: In motor drive systems in automated production lines, this MOSFET acts as a switching element to ensure precise control and efficient operation of the motor.

4. **Solar Inverters**
- In solar inverters, the RUH1H100R-VB MOSFET is used for efficient DC-AC conversion, providing low on-resistance and high power handling capabilities, ensuring that the system operates at high efficiency.
- **Application Examples**: In residential or commercial solar panel inverters, the RUH1H100R-VB helps improve the overall conversion efficiency of the system and ensures a stable output of solar power.

5. **UPS Systems and Data Center Power Supplies**
- In UPS (Uninterruptible Power Supply) systems and data center power management, the RUH1H100R-VB can provide a stable power supply to ensure the normal operation of key equipment during power outages.
- **Application Examples**: In data center power modules, the RUH1H100R-VB MOSFET can be used as a switching element to work efficiently under high load conditions, reduce power loss, and improve energy utilization in data centers.

6. **Battery Management and Energy Storage Systems**
- In battery management systems (BMS) and energy storage applications, this MOSFET has a low on-resistance and high current carrying capacity, making it suitable for use in high-efficiency battery management systems to optimize the battery charging and discharging process.
- **Application Examples**: In energy storage systems, the RUH1H100R-VB MOSFET can be used for power regulation, energy conversion, and battery balancing to improve the overall efficiency of energy storage systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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