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RUF025N02TL-VB Product details

Product introduction:

Product Introduction:

**RUF025N02TL-VB** is a low-power, high-efficiency N-channel MOSFET in SC70-3 package, suitable for applications requiring small package and high switching speed. This MOSFET has a wide operating voltage range and can withstand a maximum drain-source voltage (VDS) of 20V. It supports a continuous drain current (ID) of 4A and has a low RDS(ON), which can reach a maximum of 36mΩ at different gate voltages, providing lower conduction losses. This product uses Trench technology to ensure high switching speeds and good thermal performance, and is suitable for low-power and miniaturized circuit design.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A 48mΩ 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-3 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-3 Single-N
Detailed parameter description:

- **Model**: RUF025N02TL-VB
- **Package type**: SC70-3
- **Configuration**: Unipolar N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 48mΩ @ VGS = 2.5V
- 40mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Trench
- **Application areas**: Low power consumption, high switching efficiency, miniaturized circuits
- **Operating temperature range**: Can work stably in a wide temperature range

Domain and module applications:

Applications and module examples:

1. **Low-power electronics**: The low on-resistance of the RUF025N02TL-VB makes it ideal for low-power devices such as portable electronics, Bluetooth devices, and sensor modules. Its compact SC70-3 package is particularly suitable for space-constrained applications.

2. **Power management modules**: This MOSFET can be used as a switching element in DC-DC converters to help improve conversion efficiency. Due to its low on-resistance, it can reduce switching losses and extend battery life, and is widely used in battery-powered power management modules.

3. **Communication equipment**: This MOSFET can be used as a switching element in power amplifiers, signal modems, and radio frequency (RF) modules in communication systems, especially in applications that require high efficiency and low heat.

4. **Automation and robotics**: In automation systems or robotic controls that require high efficiency and fast switching response, the RUF025N02TL-VB is an ideal choice to ensure that the system maintains high efficiency in high-frequency operation.

5. **Smart Home and Internet of Things (IoT) Devices**: Due to its compact package and low power consumption, this MOSFET is very suitable for applications in smart home products (such as smart sockets, sensors, door locks, etc.) and IoT devices, which usually need to run for a long time and require small size and low power consumption.

6. **Portable Battery-Powered Devices**: In battery-powered devices (such as mobile power supplies, wireless headphones, smart watches, etc.), it can be used as an efficient switching element in the power conversion system to extend the use time of the device.

Through the above application examples, RUF025N02TL-VB MOSFET is suitable for a variety of low-power, high-efficiency electronic devices and modules, especially in applications that require small packages, high-frequency switching and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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