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RU8590S-VB Product details

Product introduction:

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RU8590S-VB is a unipolar N-channel MOSFET in TO263 package with 80V drain-source voltage (VDS) and 120A maximum drain current (ID). Its RDS(ON) is 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, with excellent on-state performance. This MOSFET uses Trench technology and is suitable for applications requiring high current and low on-resistance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 80V 3V 120A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
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- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology

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Domain and module applications:

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RU8590S-VB is suitable for high-efficiency power modules that require high current transmission, such as switching power supplies, DC-DC converters, battery management systems, etc. In the fields of battery charge and discharge management of electric vehicles (EVs), power regulation of solar inverters, and high-power switching power supplies in industrial automation, its low RDS(ON) characteristics can effectively reduce energy loss and improve overall efficiency. In addition, it can also be used for power conversion and motor drive systems in power supplies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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