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RU7H2K-VB Product details
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Product Introduction
RU7H2K-VB is a high voltage single N-channel MOSFET in TO251 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) can reach 700V, suitable for applications requiring high voltage and relatively low current (ID up to 2A). This MOSFET adopts planar technology, performs stably in high voltage applications, has good conduction performance, can effectively reduce power consumption and improve system efficiency.
RU7H2K-VB is a high voltage single N-channel MOSFET in TO251 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) can reach 700V, suitable for applications requiring high voltage and relatively low current (ID up to 2A). This MOSFET adopts planar technology, performs stably in high voltage applications, has good conduction performance, can effectively reduce power consumption and improve system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | 6500mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: RU7H2K-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 8125mΩ @ VGS=4.5V
- 6500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Plannar
- **Model**: RU7H2K-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 8125mΩ @ VGS=4.5V
- 6500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
Applicable fields and modules
1. **High-voltage switching power supply**: RU7H2K-VB is very suitable for high-voltage switching power supply design, which can efficiently control the conversion of electric energy and maintain stable operation under high voltage conditions.
2. **Inverter**: This MOSFET can be used in solar inverters and wind inverters to handle the high voltage generated from renewable energy equipment to ensure stable power output and system reliability.
3. **High-voltage battery management system**: In the battery management system, this device can be used as a switching element to ensure the safe charging and discharging of high-voltage batteries and effectively prevent overvoltage and overcurrent conditions.
4. **Electrical vehicle charging equipment**: RU7H2K-VB can be used in the design of chargers for electric vehicles to provide high voltage support and meet the needs of fast charging.
5. **Electrical isolation application**: In electrical isolation and high-voltage signal processing modules, this MOSFET can effectively control high-voltage signals to achieve safe signal transmission and processing.
RU7H2K-VB provides an ideal solution for high voltage applications with its high voltage and low on-resistance, meeting the high requirements of modern electronic equipment for efficiency and reliability.
1. **High-voltage switching power supply**: RU7H2K-VB is very suitable for high-voltage switching power supply design, which can efficiently control the conversion of electric energy and maintain stable operation under high voltage conditions.
2. **Inverter**: This MOSFET can be used in solar inverters and wind inverters to handle the high voltage generated from renewable energy equipment to ensure stable power output and system reliability.
3. **High-voltage battery management system**: In the battery management system, this device can be used as a switching element to ensure the safe charging and discharging of high-voltage batteries and effectively prevent overvoltage and overcurrent conditions.
4. **Electrical vehicle charging equipment**: RU7H2K-VB can be used in the design of chargers for electric vehicles to provide high voltage support and meet the needs of fast charging.
5. **Electrical isolation application**: In electrical isolation and high-voltage signal processing modules, this MOSFET can effectively control high-voltage signals to achieve safe signal transmission and processing.
RU7H2K-VB provides an ideal solution for high voltage applications with its high voltage and low on-resistance, meeting the high requirements of modern electronic equipment for efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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