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RU6888S-VB Product details
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Product Introduction
RU6888S-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high current applications with 60V voltage level. With its ultra-low on-resistance and high current handling capability, this MOSFET is very suitable for high-efficiency switching power supplies, drive circuits and other power electronic equipment. The design of RU6888S-VB combines advanced Trench technology to ensure excellent switching performance and thermal management capabilities, and is an important part of modern power electronic solutions.
RU6888S-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high current applications with 60V voltage level. With its ultra-low on-resistance and high current handling capability, this MOSFET is very suitable for high-efficiency switching power supplies, drive circuits and other power electronic equipment. The design of RU6888S-VB combines advanced Trench technology to ensure excellent switching performance and thermal management capabilities, and is an important part of modern power electronic solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RU6888S-VB
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Drain to source voltage (VDS)**: 60V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Model**: RU6888S-VB
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Drain to source voltage (VDS)**: 60V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
RU6888S-VB MOSFET is used in many fields and modules, including:
1. **High-efficiency switching power supply**: RU6888S-VB is very suitable for the main switching element of the switching power supply, which can achieve efficient power conversion, reduce energy consumption, and improve the overall efficiency of the power supply. It is widely used in computer power supplies and power adapters.
2. **Motor drive**: In motor control systems, this MOSFET can be used as a switching element to provide stable high current to ensure efficient and smooth operation of the motor. It is suitable for various industrial automation and power tools.
3. **Power conversion and management**: RU6888S-VB is suitable for power conversion modules and power management ICs. It can work under high power density and low heat generation conditions to improve system performance and reliability.
4. **Consumer electronics**: In consumer electronic products such as tablets, smartphones and other devices, this MOSFET can effectively manage power, help improve the endurance of the device, and meet the needs of high-performance electronic devices.
Through these application examples, the importance of RU6888S-VB in modern power electronic equipment is fully demonstrated, providing design engineers with efficient and reliable solutions to meet the needs of a variety of high-performance applications.
RU6888S-VB MOSFET is used in many fields and modules, including:
1. **High-efficiency switching power supply**: RU6888S-VB is very suitable for the main switching element of the switching power supply, which can achieve efficient power conversion, reduce energy consumption, and improve the overall efficiency of the power supply. It is widely used in computer power supplies and power adapters.
2. **Motor drive**: In motor control systems, this MOSFET can be used as a switching element to provide stable high current to ensure efficient and smooth operation of the motor. It is suitable for various industrial automation and power tools.
3. **Power conversion and management**: RU6888S-VB is suitable for power conversion modules and power management ICs. It can work under high power density and low heat generation conditions to improve system performance and reliability.
4. **Consumer electronics**: In consumer electronic products such as tablets, smartphones and other devices, this MOSFET can effectively manage power, help improve the endurance of the device, and meet the needs of high-performance electronic devices.
Through these application examples, the importance of RU6888S-VB in modern power electronic equipment is fully demonstrated, providing design engineers with efficient and reliable solutions to meet the needs of a variety of high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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