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RU6199Q-VB TO247 Product details
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Product Introduction
RU6199Q-VB is a high-efficiency single N-type MOSFET in TO247 package, designed for high current and high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and the maximum drain current (ID) can reach 210A, making it suitable for power management and high power applications. Its threshold voltage (Vth) is 3V, and it has a low on-resistance (RDS(ON)), which is only 3mΩ at VGS of 10V, significantly reducing power consumption and improving system efficiency.
RU6199Q-VB is a high-efficiency single N-type MOSFET in TO247 package, designed for high current and high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and the maximum drain current (ID) can reach 210A, making it suitable for power management and high power applications. Its threshold voltage (Vth) is 3V, and it has a low on-resistance (RDS(ON)), which is only 3mΩ at VGS of 10V, significantly reducing power consumption and improving system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 3V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: RU6199Q-VB
- **Package**: TO247
- **Configuration**: Single N-type
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 210A
- **Technology**: Trench technology
- **Model**: RU6199Q-VB
- **Package**: TO247
- **Configuration**: Single N-type
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 210A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
RU6199Q-VB MOSFET performs well in a variety of high-power applications. Here are some specific application examples:
1. **Power supply system**: Due to its low on-resistance and high leakage current capability, RU6199Q-VB is very suitable for use in high-efficiency switching power supplies, which can reduce power losses and improve power conversion efficiency.
2. **Motor control**: This MOSFET can be used in motor drive applications to provide high current support, suitable for motor drive systems in industrial automation and electric vehicles, ensuring efficient operation of the motor.
3. **High-frequency switching power supply**: In high-frequency switching power supply modules, RU6199Q-VB can provide fast switching capabilities and low conduction losses, suitable for computer power supplies and communication equipment.
4. **Power amplifier**: This MOSFET is suitable for the output stage of RF power amplifiers and audio amplifiers, and can effectively handle high-power signals to ensure high-quality output of audio equipment.
5. **Battery Management System**: RU6199Q-VB can be used in battery management systems for charge and discharge control, optimizing battery performance and extending battery life, and is widely used in electric vehicles and renewable energy systems.
Through these applications, RU6199Q-VB MOSFET provides excellent performance and high efficiency in modern electronic devices, meeting the needs of various high-power applications.
RU6199Q-VB MOSFET performs well in a variety of high-power applications. Here are some specific application examples:
1. **Power supply system**: Due to its low on-resistance and high leakage current capability, RU6199Q-VB is very suitable for use in high-efficiency switching power supplies, which can reduce power losses and improve power conversion efficiency.
2. **Motor control**: This MOSFET can be used in motor drive applications to provide high current support, suitable for motor drive systems in industrial automation and electric vehicles, ensuring efficient operation of the motor.
3. **High-frequency switching power supply**: In high-frequency switching power supply modules, RU6199Q-VB can provide fast switching capabilities and low conduction losses, suitable for computer power supplies and communication equipment.
4. **Power amplifier**: This MOSFET is suitable for the output stage of RF power amplifiers and audio amplifiers, and can effectively handle high-power signals to ensure high-quality output of audio equipment.
5. **Battery Management System**: RU6199Q-VB can be used in battery management systems for charge and discharge control, optimizing battery performance and extending battery life, and is widely used in electric vehicles and renewable energy systems.
Through these applications, RU6199Q-VB MOSFET provides excellent performance and high efficiency in modern electronic devices, meeting the needs of various high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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