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RU60P50S-VB Product details
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RU60P50S-VB Product Introduction
RU60P50S-VB is a high-performance single P-channel MOSFET in TO263 package, designed for negative voltage applications. Its maximum drain-source voltage is -60V, and it has excellent on-resistance performance, with RDS(ON) values of 25mΩ at VGS=4.5V and 19mΩ at VGS=10V. This enables RU60P50S-VB to operate efficiently at high currents, suitable for various power electronics applications, especially where negative electrode control is required.
RU60P50S-VB is a high-performance single P-channel MOSFET in TO263 package, designed for negative voltage applications. Its maximum drain-source voltage is -60V, and it has excellent on-resistance performance, with RDS(ON) values of 25mΩ at VGS=4.5V and 19mΩ at VGS=10V. This enables RU60P50S-VB to operate efficiently at high currents, suitable for various power electronics applications, especially where negative electrode control is required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -80A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Model**: RU60P50S-VB
- **Package**: TO263
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 25mΩ @ VGS=4.5V
- **RDS(ON)**: 19mΩ @ VGS=10V
- **ID**: -80A
- **Technology**: Trench technology
- **Model**: RU60P50S-VB
- **Package**: TO263
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 25mΩ @ VGS=4.5V
- **RDS(ON)**: 19mΩ @ VGS=10V
- **ID**: -80A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
1. **Power Management**: RU60P50S-VB is widely used in power management modules, especially in applications that require negative pole control, such as power switches and inverter designs, to achieve efficient power conversion and management.
2. **Motor Drive**: In motor control systems, this MOSFET can be used to control negative pole current to achieve motor start, stop and reverse, suitable for driving applications in electric vehicles and other power tools.
3. **LED Drive Circuit**: RU60P50S-VB can be used in LED drive circuits to provide a stable negative current to the LED, ensuring operation under optimal conditions, improving brightness and extending service life.
4. **Audio Amplifier**: In audio amplifiers and high-power audio equipment, this MOSFET can effectively control the load, improve overall audio quality and reduce distortion.
By integrating RU60P50S-VB into applications in these areas, design engineers can achieve higher efficiency and better thermal management, improving overall system performance and reliability.
1. **Power Management**: RU60P50S-VB is widely used in power management modules, especially in applications that require negative pole control, such as power switches and inverter designs, to achieve efficient power conversion and management.
2. **Motor Drive**: In motor control systems, this MOSFET can be used to control negative pole current to achieve motor start, stop and reverse, suitable for driving applications in electric vehicles and other power tools.
3. **LED Drive Circuit**: RU60P50S-VB can be used in LED drive circuits to provide a stable negative current to the LED, ensuring operation under optimal conditions, improving brightness and extending service life.
4. **Audio Amplifier**: In audio amplifiers and high-power audio equipment, this MOSFET can effectively control the load, improve overall audio quality and reduce distortion.
By integrating RU60P50S-VB into applications in these areas, design engineers can achieve higher efficiency and better thermal management, improving overall system performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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