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RU60E6HCGTR-VB Product details

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Product introduction：

RU60E6HCGTR-VB Product Introduction

RU60E6HCGTR-VB is a high-performance single N-channel MOSFET in SOP8 package, designed for medium and low voltage applications. With a maximum drain-source voltage of up to 60V, the device is suitable for switching and power management of various electronic devices. The low on-resistance of RU60E6HCGTR-VB makes it more efficient when running under high load conditions, which can effectively reduce energy loss and heat. The Trench technology it adopts ensures excellent switching performance and reliability, suitable for use in a variety of environments.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 60V 1.7V 7.6A 25mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds18 Technology
SOP8 Single-N 60V 1.7V 7.6A Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds6 Technology
SOP8 Single-N 60V 1.7V 7.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

- **Model**: RU60E6HCGTR-VB
- **Package**: SOP8
- **Configuration**: Single N channel
- **VDS**: 60V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**:
- 35mΩ (at VGS=4.5V)
- 25mΩ (at VGS=10V)
- **ID**: 7.6A
- **Technology**: Trench

Domain and module applications：

Applications and modules

RU60E6HCGTR-VB is suitable for multiple applications and modules, including:

1. **Power management**: In DC-DC converters and power conditioning modules, RU60E6HCGTR-VB can achieve efficient power conversion, reduce power consumption, and improve overall system efficiency, making it very suitable for power adapters and chargers.

2. **Motor drive**: In motor control systems, this MOSFET can be used as a switching element to effectively control the start, run, and stop of the motor, and is widely used in home appliances and industrial automation equipment.

3. **LED drive circuit**: The low RDS(ON) characteristics of RU60E6HCGTR-VB make it suitable for LED drive applications, providing a stable current, ensuring the brightness uniformity of the LED and extending its service life.

4. **Protection circuit**: In overcurrent and overvoltage protection circuits, this MOSFET can be used for fast switching to protect downstream circuits from overload and improve system safety and reliability.

RU60E6HCGTR-VB has become an ideal high-efficiency switching element in modern electronic design due to its excellent performance and wide range of application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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