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RU60E5D-VB Product details
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RU60E5D-VB Product Introduction
RU60E5D-VB is a high-performance N-channel MOSFET in SOT223 package, designed for medium voltage and medium power applications. Its maximum drain-source voltage (VDS) is 60V, supporting a maximum drain current (ID) of 4.5A. The on-resistance (RDS(ON)) of RU60E5D-VB at VGS of 10V is 76mΩ, providing excellent current transfer efficiency, ensuring low power consumption and high reliability, and is suitable for a variety of electronic circuits and equipment.
RU60E5D-VB is a high-performance N-channel MOSFET in SOT223 package, designed for medium voltage and medium power applications. Its maximum drain-source voltage (VDS) is 60V, supporting a maximum drain current (ID) of 4.5A. The on-resistance (RDS(ON)) of RU60E5D-VB at VGS of 10V is 76mΩ, providing excellent current transfer efficiency, ensuring low power consumption and high reliability, and is suitable for a variety of electronic circuits and equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Model**: RU60E5D-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 4.5A
- **Technology**: Trench technology
- **Model**: RU60E5D-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 4.5A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
RU60E5D-VB is widely used in many fields and modules, including:
1. **Power management**:
- In switching power supplies and DC-DC converters, this MOSFET is used as a switching element to effectively improve energy conversion efficiency and is suitable for power adapters and battery chargers.
2. **Consumer electronics**:
- For portable electronic devices such as smartphones and tablets, RU60E5D-VB can optimize power management and improve the energy efficiency and endurance of the device.
3. **LED lighting**:
- In LED drive circuits, RU60E5D-VB can efficiently control LED light sources, optimize their driving performance and energy efficiency, and is widely used in commercial lighting and indoor lighting.
4. **Industrial control systems**:
- In industrial automation and control equipment, this MOSFET can be used in motor drive and control circuits to achieve efficient power switching.
5. **Communication Equipment**:
- In various communication equipment and base stations, RU60E5D-VB can be used for power management to ensure efficient operation and reliability of the system.
With its excellent performance and wide application, RU60E5D-VB has become a key component in modern electronic design, adapting to a variety of efficient power management and control needs.
RU60E5D-VB is widely used in many fields and modules, including:
1. **Power management**:
- In switching power supplies and DC-DC converters, this MOSFET is used as a switching element to effectively improve energy conversion efficiency and is suitable for power adapters and battery chargers.
2. **Consumer electronics**:
- For portable electronic devices such as smartphones and tablets, RU60E5D-VB can optimize power management and improve the energy efficiency and endurance of the device.
3. **LED lighting**:
- In LED drive circuits, RU60E5D-VB can efficiently control LED light sources, optimize their driving performance and energy efficiency, and is widely used in commercial lighting and indoor lighting.
4. **Industrial control systems**:
- In industrial automation and control equipment, this MOSFET can be used in motor drive and control circuits to achieve efficient power switching.
5. **Communication Equipment**:
- In various communication equipment and base stations, RU60E5D-VB can be used for power management to ensure efficient operation and reliability of the system.
With its excellent performance and wide application, RU60E5D-VB has become a key component in modern electronic design, adapting to a variety of efficient power management and control needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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