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RU60E2B-VB Product details

Product introduction:

Product Introduction
RU60E2B-VB is a single N-channel MOSFET in SOT23-3 package, designed for low power applications. Its operating voltage range is up to 60V, which can meet various medium voltage requirements. Utilizing advanced Trench technology, RU60E2B-VB has high gate drive voltage sensitivity and stable switching performance, suitable for a variety of electronic circuits, including power management and signal processing. Although its maximum drain current is 0.3A, it can provide reliable performance in specific applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 60V 20(±V) 1.7V 0.3A 2800mΩ
Detailed parameter description
- **Model**: RU60E2B-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench

Domain and module applications:

Applicable fields and modules
1. **Low-power power management**: RU60E2B-VB is very suitable for low-power power management circuits, such as small DC-DC converters and regulated power supplies. Its low on-resistance can effectively reduce energy loss and improve overall efficiency in low-current applications.

2. **Portable electronic devices**: This MOSFET can be widely used in portable electronic devices, such as handheld devices, smart phones and tablets. Due to its small package and low power consumption, RU60E2B-VB can support the high efficiency and long battery life of these devices.

3. **Signal switch**: RU60E2B-VB can be used for signal switching applications, such as the selection and switching of audio and video signals. Its excellent switching characteristics can ensure the integrity of the signal during transmission and is suitable for use in high-frequency applications.

4. **LED driver**: In the LED driver circuit, RU60E2B-VB can be used to control the switching and dimming of LEDs, which is suitable for home lighting and interior decorative lighting. With its high voltage tolerance, it can effectively manage the situation where multiple LEDs are connected in parallel.

5. **Sensor Application**: This MOSFET can also be used in various sensor applications, such as switch control of temperature sensors and humidity sensors. RU60E2B-VB can provide stable driving capability to ensure the accuracy and reliability of the sensor under different working conditions.

RU60E2B-VB has become an important choice in low-power electronic design with its stable performance and wide application adaptability, promoting the high efficiency and reliability of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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