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RU6055S-VB Product details
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Product Introduction
RU6055S-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium and high voltage applications. With its low on-resistance and high current handling capability, the device is ideal for high-efficiency applications such as power management, switching power supplies and motor drives. RU6055S-VB utilizes advanced Trench technology to provide efficient switching performance at lower gate drive voltages, greatly reducing system power consumption and heat generation.
RU6055S-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium and high voltage applications. With its low on-resistance and high current handling capability, the device is ideal for high-efficiency applications such as power management, switching power supplies and motor drives. RU6055S-VB utilizes advanced Trench technology to provide efficient switching performance at lower gate drive voltages, greatly reducing system power consumption and heat generation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RU6055S-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Model**: RU6055S-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: RU6055S-VB is well suited for power management applications, especially in high-efficiency DC-DC converters. Its low on-resistance characteristics help improve power conversion efficiency and reduce heat loss, making it an ideal choice for power solutions for modern electronic devices.
2. **Switching power supply**: This MOSFET can be widely used in switching power supply modules such as adapters, chargers, and power supplies. With its high current handling capability, RU6055S-VB can meet the needs of high-power loads while maintaining high efficiency.
3. **Motor control**: In motor drive applications, RU6055S-VB can be used as an efficient switching element, suitable for DC motors, stepper motors, and brushless motor control. Its low on-resistance and high current capability enable it to provide smooth motor drive, and is widely used in industrial automation, home appliances, and robotics.
4. **LED lighting**: RU6055S-VB is suitable for LED driver applications and can effectively control the switching and dimming of LED lights. Its excellent performance ensures that LED lighting systems can work stably under different load conditions and is widely used in indoor and outdoor lighting solutions.
5. **Communication equipment**: In communication equipment, this MOSFET can be used in power amplifiers and RF applications. With its fast switching capability and high current handling characteristics, RU6055S-VB can ensure high-quality transmission and reliability of signals and is widely used in wireless networks and mobile communication devices.
With its excellent performance and wide applicability, RU6055S-VB has become a very popular choice in medium and high voltage applications, promoting the high efficiency and stability of modern electronic devices.
1. **Power management**: RU6055S-VB is well suited for power management applications, especially in high-efficiency DC-DC converters. Its low on-resistance characteristics help improve power conversion efficiency and reduce heat loss, making it an ideal choice for power solutions for modern electronic devices.
2. **Switching power supply**: This MOSFET can be widely used in switching power supply modules such as adapters, chargers, and power supplies. With its high current handling capability, RU6055S-VB can meet the needs of high-power loads while maintaining high efficiency.
3. **Motor control**: In motor drive applications, RU6055S-VB can be used as an efficient switching element, suitable for DC motors, stepper motors, and brushless motor control. Its low on-resistance and high current capability enable it to provide smooth motor drive, and is widely used in industrial automation, home appliances, and robotics.
4. **LED lighting**: RU6055S-VB is suitable for LED driver applications and can effectively control the switching and dimming of LED lights. Its excellent performance ensures that LED lighting systems can work stably under different load conditions and is widely used in indoor and outdoor lighting solutions.
5. **Communication equipment**: In communication equipment, this MOSFET can be used in power amplifiers and RF applications. With its fast switching capability and high current handling characteristics, RU6055S-VB can ensure high-quality transmission and reliability of signals and is widely used in wireless networks and mobile communication devices.
With its excellent performance and wide applicability, RU6055S-VB has become a very popular choice in medium and high voltage applications, promoting the high efficiency and stability of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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