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RU5H13R-VB Product details
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RU5H13R-VB Product Introduction
RU5H13R-VB is a high-performance N-channel MOSFET in TO220F package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) reaches 550V, and it can carry a drain current (ID) of up to 18A, which is very suitable for applications requiring high voltage and high current density. The on-resistance (RDS(ON)) of RU5H13R-VB is 260mΩ at VGS of 10V, which ensures good current transfer performance and reduces power consumption, making it an ideal choice in modern electronic design.
RU5H13R-VB is a high-performance N-channel MOSFET in TO220F package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) reaches 550V, and it can carry a drain current (ID) of up to 18A, which is very suitable for applications requiring high voltage and high current density. The on-resistance (RDS(ON)) of RU5H13R-VB is 260mΩ at VGS of 10V, which ensures good current transfer performance and reduces power consumption, making it an ideal choice in modern electronic design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: RU5H13R-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 18A
- **Technology**: Plannar technology
- **Model**: RU5H13R-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 18A
- **Technology**: Plannar technology
Domain and module applications：
Application fields and module examples
RU5H13R-VB is widely used in many fields and modules, including:
1. **Power converter**:
- In high-voltage DC-DC converters and AC-DC power supplies, this MOSFET is used as a switching element to effectively improve energy efficiency and ensure stable voltage output.
2. **Electric vehicle charging system**:
- For charging stations and battery management systems for electric vehicles, RU5H13R-VB can support high-voltage and high-power charging requirements, improve charging efficiency and safety.
3. **Industrial control system**:
- In industrial automation equipment, this MOSFET is used as a power switch to achieve high-efficiency motor drive and control, ensuring reliable operation of the system.
4. **Lighting equipment**:
- In high-power LED drive circuits, RU5H13R-VB can be used as a key switching element to optimize the driving efficiency of the light source and improve the lighting effect.
5. **Consumer Electronics**:
- In various portable electronic devices, this MOSFET is used for power management and distribution, optimizing energy efficiency and system performance, and providing a better user experience.
With its excellent performance and wide range of applications, RU5H13R-VB becomes a key component in high voltage and high power electronic design.
RU5H13R-VB is widely used in many fields and modules, including:
1. **Power converter**:
- In high-voltage DC-DC converters and AC-DC power supplies, this MOSFET is used as a switching element to effectively improve energy efficiency and ensure stable voltage output.
2. **Electric vehicle charging system**:
- For charging stations and battery management systems for electric vehicles, RU5H13R-VB can support high-voltage and high-power charging requirements, improve charging efficiency and safety.
3. **Industrial control system**:
- In industrial automation equipment, this MOSFET is used as a power switch to achieve high-efficiency motor drive and control, ensuring reliable operation of the system.
4. **Lighting equipment**:
- In high-power LED drive circuits, RU5H13R-VB can be used as a key switching element to optimize the driving efficiency of the light source and improve the lighting effect.
5. **Consumer Electronics**:
- In various portable electronic devices, this MOSFET is used for power management and distribution, optimizing energy efficiency and system performance, and providing a better user experience.
With its excellent performance and wide range of applications, RU5H13R-VB becomes a key component in high voltage and high power electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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