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RU4H15P-VB Product details
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RU4H15P-VB Product Introduction
The RU4H15P-VB is a high voltage single N-channel MOSFET in a TO220F package for high power applications. The device is designed to withstand drain-source voltages up to 550V and is suitable for use in a variety of power electronics and switching applications. With its low RDS(ON) value (260mΩ @ VGS=10V) and maximum drain current capability of 18A, the RU4H15P-VB is able to provide excellent performance in high efficiency and thermal management.
The RU4H15P-VB is a high voltage single N-channel MOSFET in a TO220F package for high power applications. The device is designed to withstand drain-source voltages up to 550V and is suitable for use in a variety of power electronics and switching applications. With its low RDS(ON) value (260mΩ @ VGS=10V) and maximum drain current capability of 18A, the RU4H15P-VB is able to provide excellent performance in high efficiency and thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: RU4H15P-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS**: 550V
- **VGS**: ±30V
- **Vth**: 3V
- **RDS(ON)**: 260mΩ @ VGS=10V
- **ID**: 18A
- **Technology**: Planar technology (Plannar)
- **Model**: RU4H15P-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS**: 550V
- **VGS**: ±30V
- **Vth**: 3V
- **RDS(ON)**: 260mΩ @ VGS=10V
- **ID**: 18A
- **Technology**: Planar technology (Plannar)
Domain and module applications：
Applications and modules
1. **Switching power supplies**: The RU4H15P-VB enables efficient power conversion in switching power supplies, especially in applications that require high voltage and high current, such as industrial power supplies and household appliances.
2. **Motor drives**: In motor control and drive systems, this MOSFET can be used for speed regulation and control of high-voltage DC motors, providing stable current output and efficient thermal management.
3. **Inverters**: Suitable for photovoltaic inverters and electric vehicle drive systems, the RU4H15P-VB enables efficient power conversion and signal processing in high-voltage environments.
4. **Power electronic modules**: This MOSFET can be used in various power electronic modules, such as power modules and power amplifiers, to meet the needs of high voltage and high efficiency.
By integrating the RU4H15P-VB into these applications, design engineers can achieve higher efficiency and better thermal performance, improving overall system reliability.
1. **Switching power supplies**: The RU4H15P-VB enables efficient power conversion in switching power supplies, especially in applications that require high voltage and high current, such as industrial power supplies and household appliances.
2. **Motor drives**: In motor control and drive systems, this MOSFET can be used for speed regulation and control of high-voltage DC motors, providing stable current output and efficient thermal management.
3. **Inverters**: Suitable for photovoltaic inverters and electric vehicle drive systems, the RU4H15P-VB enables efficient power conversion and signal processing in high-voltage environments.
4. **Power electronic modules**: This MOSFET can be used in various power electronic modules, such as power modules and power amplifiers, to meet the needs of high voltage and high efficiency.
By integrating the RU4H15P-VB into these applications, design engineers can achieve higher efficiency and better thermal performance, improving overall system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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