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RU4H10P-VB Product details
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Product Introduction
RU4H10P-VB is a high voltage unipolar N-channel MOSFET in TO220F package, designed for high voltage and high current applications. With its 550V drain to source voltage (VDS) and excellent switching performance, this MOSFET excels in high-efficiency power management and industrial applications. Suitable for demanding environments, RU4H10P-VB provides design engineers with a powerful solution to meet the high requirements of modern power electronics equipment.
RU4H10P-VB is a high voltage unipolar N-channel MOSFET in TO220F package, designed for high voltage and high current applications. With its 550V drain to source voltage (VDS) and excellent switching performance, this MOSFET excels in high-efficiency power management and industrial applications. Suitable for demanding environments, RU4H10P-VB provides design engineers with a powerful solution to meet the high requirements of modern power electronics equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: RU4H10P-VB
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Drain to source voltage (VDS)**: 550V
- **Gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
- **Model**: RU4H10P-VB
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Drain to source voltage (VDS)**: 550V
- **Gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
RU4H10P-VB MOSFET is used in multiple fields and modules including:
1. **High-voltage power management**: In high-voltage switching power supplies and inverters, RU4H10P-VB is able to handle high voltages and high currents, and is suitable for use in power systems and renewable energy sources such as solar inverters.
2. **Electric drive systems**: This MOSFET performs well in electric vehicles and industrial motor drives, and can efficiently control current to ensure the stability and reliability of electric equipment.
3. **Power converter**: RU4H10P-VB is suitable for AC-DC and DC-DC converters, and can be used for efficient conversion of power electronic equipment, improve energy utilization, and is widely used in data centers and telecommunications equipment.
4. **Power control**: In industrial control systems, RU4H10P-VB can be used as an efficient switching element, suitable for power control and load management of industrial equipment, improving the performance and efficiency of the overall system.
Through these application examples, we can see the importance of RU4H10P-VB in modern power electronic equipment, providing design engineers with efficient and reliable solutions to meet the needs of various high voltage and high current applications.
RU4H10P-VB MOSFET is used in multiple fields and modules including:
1. **High-voltage power management**: In high-voltage switching power supplies and inverters, RU4H10P-VB is able to handle high voltages and high currents, and is suitable for use in power systems and renewable energy sources such as solar inverters.
2. **Electric drive systems**: This MOSFET performs well in electric vehicles and industrial motor drives, and can efficiently control current to ensure the stability and reliability of electric equipment.
3. **Power converter**: RU4H10P-VB is suitable for AC-DC and DC-DC converters, and can be used for efficient conversion of power electronic equipment, improve energy utilization, and is widely used in data centers and telecommunications equipment.
4. **Power control**: In industrial control systems, RU4H10P-VB can be used as an efficient switching element, suitable for power control and load management of industrial equipment, improving the performance and efficiency of the overall system.
Through these application examples, we can see the importance of RU4H10P-VB in modern power electronic equipment, providing design engineers with efficient and reliable solutions to meet the needs of various high voltage and high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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