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RU40190S-VB Product details
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Product Introduction
RU40190S-VB is a high-performance TO263 packaged single N-type MOSFET designed for medium-to-high voltage and high current applications. Its VDS tolerance is 40V and its maximum carrying current can reach 150A, making it extremely suitable for power management and switch control systems that require high performance and low power consumption. RU40190S-VB uses advanced Trench technology and has very low on-resistance (2.5mΩ@VGS=4.5V and 2mΩ@VGS=10V), which significantly reduces power loss and optimizes thermal management performance. It is widely used in various electronic products.
RU40190S-VB is a high-performance TO263 packaged single N-type MOSFET designed for medium-to-high voltage and high current applications. Its VDS tolerance is 40V and its maximum carrying current can reach 150A, making it extremely suitable for power management and switch control systems that require high performance and low power consumption. RU40190S-VB uses advanced Trench technology and has very low on-resistance (2.5mΩ@VGS=4.5V and 2mΩ@VGS=10V), which significantly reduces power loss and optimizes thermal management performance. It is widely used in various electronic products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter description
- **Package**: TO263
- **Configuration**: Single N-type channel
- **VDS**: 40V
- **VGS**: ±20V
- **Vth**: 3V
- **RDS(ON)**:
- 2.5mΩ（VGS=4.5V）
- 2mΩ（VGS=10V）
- **ID**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-type channel
- **VDS**: 40V
- **VGS**: ±20V
- **Vth**: 3V
- **RDS(ON)**:
- 2.5mΩ（VGS=4.5V）
- 2mΩ（VGS=10V）
- **ID**: 150A
- **Technology**: Trench
Domain and module applications：
Applications
RU40190S-VB is widely used in power management, DC-DC converters, switching power supplies and load switches. Due to its excellent conduction performance and high current carrying capacity, this MOSFET is particularly suitable for high-efficiency power solutions and can provide reliable power supply.
In the fields of automotive electronics and industrial automation, RU40190S-VB can be used in motor drives, chargers and battery management systems to effectively improve the efficiency and stability of the system. For consumer electronics, such as high-performance computers and gaming devices, this MOSFET can help achieve fast power switching and stable output to meet the needs under high load conditions.
In addition, due to its low power consumption characteristics, RU40190S-VB is also very suitable for green energy solutions, such as solar inverters and power monitoring systems, to help achieve higher energy efficiency and less environmental impact. Its TO263 package design also makes the device well adaptable in space-constrained applications, facilitating integration and wiring.
RU40190S-VB is widely used in power management, DC-DC converters, switching power supplies and load switches. Due to its excellent conduction performance and high current carrying capacity, this MOSFET is particularly suitable for high-efficiency power solutions and can provide reliable power supply.
In the fields of automotive electronics and industrial automation, RU40190S-VB can be used in motor drives, chargers and battery management systems to effectively improve the efficiency and stability of the system. For consumer electronics, such as high-performance computers and gaming devices, this MOSFET can help achieve fast power switching and stable output to meet the needs under high load conditions.
In addition, due to its low power consumption characteristics, RU40190S-VB is also very suitable for green energy solutions, such as solar inverters and power monitoring systems, to help achieve higher energy efficiency and less environmental impact. Its TO263 package design also makes the device well adaptable in space-constrained applications, facilitating integration and wiring.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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