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RU3710S-VB Product details
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Product Introduction
RU3710S-VB is a high-efficiency single N-type MOSFET in TO263 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 100V, which can withstand higher voltage loads and is suitable for various power management and switch control applications. The threshold voltage (Vth) of this MOSFET is 1.8V, which can be effectively turned on at a lower gate-source voltage. The on-resistance (RDS(ON)) is 20mΩ at VGS of 10V, ensuring extremely low power consumption in the on state, which makes the RU3710S-VB perform well in applications requiring high efficiency.
RU3710S-VB is a high-efficiency single N-type MOSFET in TO263 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 100V, which can withstand higher voltage loads and is suitable for various power management and switch control applications. The threshold voltage (Vth) of this MOSFET is 1.8V, which can be effectively turned on at a lower gate-source voltage. The on-resistance (RDS(ON)) is 20mΩ at VGS of 10V, ensuring extremely low power consumption in the on state, which makes the RU3710S-VB perform well in applications requiring high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RU3710S-VB
- **Package**: TO263
- **Configuration**: Single N-type
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench technology
- **Model**: RU3710S-VB
- **Package**: TO263
- **Configuration**: Single N-type
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
RU3710S-VB MOSFET is widely used in multiple high voltage and high power applications, including:
1. **Power Converter**: In switch mode power supplies (SMPS) and DC-DC converters, RU3710S-VB can efficiently convert power and reduce energy loss, suitable for industrial and consumer electronics.
2. **Motor Drive**: In motor control systems, this MOSFET can be used to control high power motors, providing efficient switching and speed regulation performance, suitable for various power tools and household appliances.
3. **Battery Management System**: RU3710S-VB also plays an important role in battery charging and management systems, which can accurately control the charging and discharging process, improve the battery life and safety, and is widely used in electric vehicles and energy storage systems.
4. **LED Drive Circuit**: In LED lighting and drive applications, this MOSFET can efficiently control the driving current of LEDs, improve brightness and efficiency, and is suitable for commercial lighting and automotive lighting systems.
5. **Communication equipment**: RU3710S-VB is also used in high-frequency communication equipment, which can achieve efficient power amplification and signal processing, and is suitable for base stations and wireless communication modules.
Through these application examples, RU3710S-VB MOSFET demonstrates its importance in modern power electronic equipment, especially in situations where high performance and high reliability are strictly required.
RU3710S-VB MOSFET is widely used in multiple high voltage and high power applications, including:
1. **Power Converter**: In switch mode power supplies (SMPS) and DC-DC converters, RU3710S-VB can efficiently convert power and reduce energy loss, suitable for industrial and consumer electronics.
2. **Motor Drive**: In motor control systems, this MOSFET can be used to control high power motors, providing efficient switching and speed regulation performance, suitable for various power tools and household appliances.
3. **Battery Management System**: RU3710S-VB also plays an important role in battery charging and management systems, which can accurately control the charging and discharging process, improve the battery life and safety, and is widely used in electric vehicles and energy storage systems.
4. **LED Drive Circuit**: In LED lighting and drive applications, this MOSFET can efficiently control the driving current of LEDs, improve brightness and efficiency, and is suitable for commercial lighting and automotive lighting systems.
5. **Communication equipment**: RU3710S-VB is also used in high-frequency communication equipment, which can achieve efficient power amplification and signal processing, and is suitable for base stations and wireless communication modules.
Through these application examples, RU3710S-VB MOSFET demonstrates its importance in modern power electronic equipment, especially in situations where high performance and high reliability are strictly required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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