中文
English
RU3582S-VB Product details
Back to previous pageProduct introduction：
Product Introduction
RU3582S-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. Its maximum drain-source voltage is 40V, and it can operate stably under high load conditions. The MOSFET has an extremely low on-resistance (RDS(ON) is 5mΩ@VGS=10V), showing excellent energy efficiency, and is suitable for power management systems that require high efficiency. Using advanced Trench technology, RU3582S-VB can maintain excellent electrical characteristics in compact circuit designs and is widely used in various high-power electronic devices.
RU3582S-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. Its maximum drain-source voltage is 40V, and it can operate stably under high load conditions. The MOSFET has an extremely low on-resistance (RDS(ON) is 5mΩ@VGS=10V), showing excellent energy efficiency, and is suitable for power management systems that require high efficiency. Using advanced Trench technology, RU3582S-VB can maintain excellent electrical characteristics in compact circuit designs and is widely used in various high-power electronic devices.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RU3582S-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Model**: RU3582S-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: RU3582S-VB is widely used in high-efficiency DC-DC converters and switching power supplies (SMPS). Its low on-resistance and high current capability enable it to significantly improve system efficiency and reduce energy loss in power management applications.
2. **Electric vehicles**: In the power system and battery management of electric vehicles, this MOSFET can be used for battery switching and drive control to ensure efficient current transmission and meet high power requirements.
3. **Industrial automation**: RU3582S-VB performs well in motor drives, robot control and automation equipment, supports efficient current control, and is suitable for various industrial applications.
4. **Consumer electronics**: In consumer electronics such as power adapters and fast chargers, this MOSFET can efficiently manage power, ensure fast charging and stable operation of the device, and improve user experience.
RU3582S-VB demonstrates its important position in modern high-power electronic devices through its excellent performance and wide application potential, and can meet the stringent requirements of various applications for high performance and reliability.
1. **Power management**: RU3582S-VB is widely used in high-efficiency DC-DC converters and switching power supplies (SMPS). Its low on-resistance and high current capability enable it to significantly improve system efficiency and reduce energy loss in power management applications.
2. **Electric vehicles**: In the power system and battery management of electric vehicles, this MOSFET can be used for battery switching and drive control to ensure efficient current transmission and meet high power requirements.
3. **Industrial automation**: RU3582S-VB performs well in motor drives, robot control and automation equipment, supports efficient current control, and is suitable for various industrial applications.
4. **Consumer electronics**: In consumer electronics such as power adapters and fast chargers, this MOSFET can efficiently manage power, ensure fast charging and stable operation of the device, and improve user experience.
RU3582S-VB demonstrates its important position in modern high-power electronic devices through its excellent performance and wide application potential, and can meet the stringent requirements of various applications for high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
