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RU30P3B-VB Product details
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RU30P3B-VB Product Introduction
RU30P3B-VB is a high-performance P-Channel MOSFET in SOT23-3 package, designed for high-performance and low-power applications. It has excellent conduction performance and low on-resistance, making it very suitable for power management and switch control. RU30P3B-VB has outstanding performance in load current and voltage handling capabilities, which can effectively improve the overall efficiency and reliability of electronic equipment.
RU30P3B-VB is a high-performance P-Channel MOSFET in SOT23-3 package, designed for high-performance and low-power applications. It has excellent conduction performance and low on-resistance, making it very suitable for power management and switch control. RU30P3B-VB has outstanding performance in load current and voltage handling capabilities, which can effectively improve the overall efficiency and reliability of electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
Detailed parameter description
- **Model**: RU30P3B-VB
- **Package**: SOT23-3
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ (at VGS=4.5V)
- 46mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: -5.6A
- **Technology**: Trench technology
- **Model**: RU30P3B-VB
- **Package**: SOT23-3
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ (at VGS=4.5V)
- 46mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: -5.6A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
1. **Power management**: RU30P3B-VB performs well in power management applications and can be used in DC-DC converters, linear regulators, etc. to provide efficient power switching, reduce energy loss, and improve system efficiency.
2. **Switch control**: This MOSFET can be widely used in switching circuits such as motor control and relay drive. It can effectively control the load and is suitable for home appliances and industrial equipment.
3. **LED drive**: RU30P3B-VB is suitable for LED lighting applications. It can provide stable current when driving LEDs, ensure uniform brightness, and improve energy utilization. It is widely used in indoor and outdoor lighting solutions.
4. **Consumer electronics**: In portable electronic products such as smartphones, tablets, and wearable devices, this MOSFET can be used for efficient power management and signal switching, helping to extend battery life and improve device performance.
5. **Automotive Electronics**: RU30P3B-VB can be used for power control and signal switching in automotive electronic systems, meeting the automotive demand for high reliability and durability, and is suitable for power distribution and drive circuits.
Through these applications, RU30P3B-VB shows its importance in modern electronic design and is an ideal choice for various high-performance and high-power requirements.
1. **Power management**: RU30P3B-VB performs well in power management applications and can be used in DC-DC converters, linear regulators, etc. to provide efficient power switching, reduce energy loss, and improve system efficiency.
2. **Switch control**: This MOSFET can be widely used in switching circuits such as motor control and relay drive. It can effectively control the load and is suitable for home appliances and industrial equipment.
3. **LED drive**: RU30P3B-VB is suitable for LED lighting applications. It can provide stable current when driving LEDs, ensure uniform brightness, and improve energy utilization. It is widely used in indoor and outdoor lighting solutions.
4. **Consumer electronics**: In portable electronic products such as smartphones, tablets, and wearable devices, this MOSFET can be used for efficient power management and signal switching, helping to extend battery life and improve device performance.
5. **Automotive Electronics**: RU30P3B-VB can be used for power control and signal switching in automotive electronic systems, meeting the automotive demand for high reliability and durability, and is suitable for power distribution and drive circuits.
Through these applications, RU30P3B-VB shows its importance in modern electronic design and is an ideal choice for various high-performance and high-power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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