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RU30E4B-VB Product details
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Product Introduction
RU30E4B-VB is a high-performance SOT23-3 packaged single-tube N-type MOSFET designed for low voltage and medium current applications. Its VDS tolerance is 30V and it can handle currents up to 6.5A, making it ideal for a variety of power management and switch control applications. RU30E4B-VB has good on-resistance characteristics (33mΩ@VGS=4.5V and 30mΩ@VGS=10V), which effectively reduces energy consumption while improving the overall efficiency of the system, and is widely used in consumer electronics and industrial equipment.
RU30E4B-VB is a high-performance SOT23-3 packaged single-tube N-type MOSFET designed for low voltage and medium current applications. Its VDS tolerance is 30V and it can handle currents up to 6.5A, making it ideal for a variety of power management and switch control applications. RU30E4B-VB has good on-resistance characteristics (33mΩ@VGS=4.5V and 30mΩ@VGS=10V), which effectively reduces energy consumption while improving the overall efficiency of the system, and is widely used in consumer electronics and industrial equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 30V | 1.7V | 6.5A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Parameter description
- **Package**: SOT23-3
- **Configuration**: Single N-type channel
- **VDS**: 30V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**:
- 33mΩ（VGS=4.5V）
- 30mΩ（VGS=10V）
- **ID**: 6.5A
- **Technology**: Trench
- **Package**: SOT23-3
- **Configuration**: Single N-type channel
- **VDS**: 30V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**:
- 33mΩ（VGS=4.5V）
- 30mΩ（VGS=10V）
- **ID**: 6.5A
- **Technology**: Trench
Domain and module applications：
Applications: RU30E4B-VB is widely used in power management systems, such as DC-DC converters, switching power supplies, and high-efficiency power modules, and is particularly suitable for low-voltage, high-efficiency applications. Due to its low on-resistance, this MOSFET performs well in portable devices, mobile phones, and other consumer electronics, providing stable and efficient power output. In industrial equipment, RU30E4B-VB is also commonly used in motor drives and other high-efficiency power control solutions to ensure system reliability and stability when the load changes. In addition, this MOSFET is suitable for LED drivers, smart home devices, and automotive electronic systems, and can meet the needs of high performance and reliability in a variety of fields. Its compact package design makes it suitable for applications with limited space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
