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RU30160S-VB Product details
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Product Introduction
RU30160S-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 30V, and it can withstand a leakage current (ID) of up to 150A. With its ultra-low on-resistance and excellent switching characteristics, RU30160S-VB performs well in power management, load control and other applications. It is an ideal choice for modern circuit design, especially for occasions requiring high performance and high reliability.
RU30160S-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 30V, and it can withstand a leakage current (ID) of up to 150A. With its ultra-low on-resistance and excellent switching characteristics, RU30160S-VB performs well in power management, load control and other applications. It is an ideal choice for modern circuit design, especially for occasions requiring high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: RU30160S-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
- **Model**: RU30160S-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
RU30160S-VB has a wide range of applications in many fields, including:
1. **Power management**: In high-efficiency DC-DC converters, this MOSFET can be used as a switching element to achieve efficient voltage conversion, reduce energy consumption, and improve the overall efficiency of the system. It is suitable for portable devices and industrial power modules.
2. **Motor control**: In motor drive systems, RU30160S-VB can handle high currents and ensure the stability of motor start-up and operation. It is suitable for various industrial equipment and automation systems.
3. **Battery management system**: In battery charge and discharge management, this MOSFET can optimize charging efficiency and improve battery life, especially in electric vehicles and renewable energy equipment.
4. **LED driver**: In LED lighting applications, RU30160S-VB can be used as an efficient driver to provide stable current, ensure the brightness consistency and extend the service life of LEDs, and is suitable for commercial lighting and home lighting.
5. **Communication equipment**: In communication equipment, this MOSFET can be used as a signal switch and a power switch to improve the performance and reliability of the equipment and ensure the stability of signal transmission.
Through these applications, RU30160S-VB helps designers achieve high-efficiency and high-reliability circuit design to meet the stringent requirements of modern electronic products for high power and low power consumption.
RU30160S-VB has a wide range of applications in many fields, including:
1. **Power management**: In high-efficiency DC-DC converters, this MOSFET can be used as a switching element to achieve efficient voltage conversion, reduce energy consumption, and improve the overall efficiency of the system. It is suitable for portable devices and industrial power modules.
2. **Motor control**: In motor drive systems, RU30160S-VB can handle high currents and ensure the stability of motor start-up and operation. It is suitable for various industrial equipment and automation systems.
3. **Battery management system**: In battery charge and discharge management, this MOSFET can optimize charging efficiency and improve battery life, especially in electric vehicles and renewable energy equipment.
4. **LED driver**: In LED lighting applications, RU30160S-VB can be used as an efficient driver to provide stable current, ensure the brightness consistency and extend the service life of LEDs, and is suitable for commercial lighting and home lighting.
5. **Communication equipment**: In communication equipment, this MOSFET can be used as a signal switch and a power switch to improve the performance and reliability of the equipment and ensure the stability of signal transmission.
Through these applications, RU30160S-VB helps designers achieve high-efficiency and high-reliability circuit design to meet the stringent requirements of modern electronic products for high power and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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