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RU2HE5L-VB Product details
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Product Introduction
RU2HE5L-VB is a high voltage single N-channel MOSFET in TO252 package, designed for applications requiring high voltage and high reliability. The device has a maximum drain-source voltage of 200V, suitable for operation in harsh power environments. RU2HE5L-VB uses Trench technology, has moderate on-resistance, and can perform well in switching performance and energy efficiency. It is widely used in power management and high-voltage drive circuits.
RU2HE5L-VB is a high voltage single N-channel MOSFET in TO252 package, designed for applications requiring high voltage and high reliability. The device has a maximum drain-source voltage of 200V, suitable for operation in harsh power environments. RU2HE5L-VB uses Trench technology, has moderate on-resistance, and can perform well in switching performance and energy efficiency. It is widely used in power management and high-voltage drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: RU2HE5L-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: Trench technology
- **Model**: RU2HE5L-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **High-voltage power management**: RU2HE5L-VB is widely used in switching power supplies (SMPS) and DC-DC converters. It can stably control current under high voltage environment and is suitable for battery chargers and power adapters.
2. **Motor control**: This MOSFET is suitable for motor drive systems, especially in applications requiring high voltage, such as brushless DC motors and stepper motors, and can provide reliable current management.
3. **Industrial equipment**: RU2HE5L-VB is suitable for industrial control and automation equipment. It can withstand high voltage conditions to ensure stable operation and efficient control of equipment.
4. **LED drive**: Due to its low on-resistance, this MOSFET can be used in high-power LED drive circuits to effectively control the current of the LED, ensure stable brightness and increase the service life of the LED.
Through these application examples, RU2HE5L-VB demonstrates its wide applicability and superior performance in modern electronic design, making it an ideal choice for high voltage and high efficiency applications.
1. **High-voltage power management**: RU2HE5L-VB is widely used in switching power supplies (SMPS) and DC-DC converters. It can stably control current under high voltage environment and is suitable for battery chargers and power adapters.
2. **Motor control**: This MOSFET is suitable for motor drive systems, especially in applications requiring high voltage, such as brushless DC motors and stepper motors, and can provide reliable current management.
3. **Industrial equipment**: RU2HE5L-VB is suitable for industrial control and automation equipment. It can withstand high voltage conditions to ensure stable operation and efficient control of equipment.
4. **LED drive**: Due to its low on-resistance, this MOSFET can be used in high-power LED drive circuits to effectively control the current of the LED, ensure stable brightness and increase the service life of the LED.
Through these application examples, RU2HE5L-VB demonstrates its wide applicability and superior performance in modern electronic design, making it an ideal choice for high voltage and high efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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